| PartNumber | FJAF4310OTU | FJAF4210OTU | FJAF4210RTU |
| Description | Bipolar Transistors - BJT NPN Si Transistor Epitaxial | Bipolar Transistors - BJT PNP Si Transistor Epitaxial | Bipolar Transistors - BJT PNP Si Transistor Epitaxial |
| Manufacturer | ON Semiconductor | ON Semiconductor | ON Semiconductor |
| Product Category | Bipolar Transistors - BJT | Bipolar Transistors - BJT | Bipolar Transistors - BJT |
| RoHS | Y | Y | Y |
| Mounting Style | Through Hole | Through Hole | Through Hole |
| Package / Case | TO-3PF-3 | TO-3PF-3 | TO-3PF-3 |
| Transistor Polarity | NPN | PNP | PNP |
| Configuration | Single | Single | Single |
| Collector Emitter Voltage VCEO Max | 140 V | - 140 V | - 140 V |
| Collector Base Voltage VCBO | 200 V | - 200 V | - 200 V |
| Emitter Base Voltage VEBO | 6 V | - 6 V | - 6 V |
| Collector Emitter Saturation Voltage | 0.5 V | - 0.5 V | - 0.5 V |
| Maximum DC Collector Current | 10 A | 10 A | 10 A |
| Gain Bandwidth Product fT | 30 MHz | 30 MHz | 30 MHz |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
| Series | FJAF4310 | FJAF4210 | FJAF4210 |
| DC Current Gain hFE Max | 180 | 180 | 180 |
| Height | 16.7 mm | 16.7 mm | 16.7 mm (Max) |
| Length | 15.7 mm | 15.7 mm | 15.7 mm (Max) |
| Packaging | Tube | Tube | - |
| Width | 5.7 mm | 5.7 mm | 5.7 mm (Max) |
| Brand | ON Semiconductor / Fairchild | ON Semiconductor / Fairchild | ON Semiconductor / Fairchild |
| Continuous Collector Current | 10 A | - 10 A | - 10 A |
| DC Collector/Base Gain hfe Min | 50 | 50 | 50 |
| Pd Power Dissipation | 80 W | 80 W | 80 W |
| Product Type | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors |
| Factory Pack Quantity | 360 | 360 | 360 |
| Subcategory | Transistors | Transistors | Transistors |
| Part # Aliases | FJAF4310OTU_NL | FJAF4210OTU_NL | FJAF4210RTU_NL |
| Unit Weight | 0.245577 oz | 0.245577 oz | 0.245577 oz |