 |  | | |
| PartNumber | FGY120T65SPD-F085 | FGY120T65SPD | FGY120T65SPD_F085 |
| Description | IGBT Transistors 650V FS Trench IGBT Gen3 | Trans IGBT Chip N-CH 650V 240A 3-Pin TO-247 Tube (Alt: FGY120T65SPD-F085) | |
| Manufacturer | ON Semiconductor | - | Fairchild Semiconductor |
| Product Category | IGBT Transistors | - | IGBTs - Single |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Package / Case | TO-247-3 | - | - |
| Mounting Style | Through Hole | - | Through Hole |
| Configuration | Single | - | Single |
| Collector Emitter Voltage VCEO Max | 650 V | - | - |
| Collector Emitter Saturation Voltage | 1.5 V | - | 1.8 V |
| Maximum Gate Emitter Voltage | 20 V | - | +/- 20 V |
| Continuous Collector Current at 25 C | 240 A | - | 240 A |
| Pd Power Dissipation | 882 W | - | - |
| Minimum Operating Temperature | - 55 C | - | - 55 C |
| Maximum Operating Temperature | + 175 C | - | + 175 C |
| Series | FGY120T65S_F085 | - | Automotive, AEC-Q101 |
| Qualification | AEC-Q101 | - | - |
| Packaging | Tube | - | Tube |
| Continuous Collector Current Ic Max | 240 A | - | - |
| Brand | ON Semiconductor / Fairchild | - | - |
| Gate Emitter Leakage Current | +/- 250 nA | - | +/- 250 nA |
| Product Type | IGBT Transistors | - | - |
| Factory Pack Quantity | 450 | - | - |
| Subcategory | IGBTs | - | - |
| Part # Aliases | FGY120T65SPD_F085 | - | - |
| Unit Weight | 0.215171 oz | - | - |
| Package Case | - | - | TO-247-3 Exposed Pad |
| Input Type | - | - | Standard |
| Mounting Type | - | - | Through Hole |
| Supplier Device Package | - | - | PowerTO-247-3 |
| Power Max | - | - | 882W |
| Reverse Recovery Time trr | - | - | 123ns |
| Current Collector Ic Max | - | - | 240A |
| Voltage Collector Emitter Breakdown Max | - | - | 650V |
| IGBT Type | - | - | Trench Field Stop |
| Current Collector Pulsed Icm | - | - | 378A |
| Vce on Max Vge Ic | - | - | 1.85V @ 15V, 120A |
| Switching Energy | - | - | 6.8μJ (on), 3.5μJ (off) |
| Gate Charge | - | - | 162nC |
| Td on off 25°C | - | - | 53ns/102ns |
| Test Condition | - | - | 400V, 120A, 5 Ohm, 15V |
| Pd Power Dissipation | - | - | 882 W |
| Collector Emitter Voltage VCEO Max | - | - | 650 V |
| Өндіруші | Бөлім № | Сипаттама | RFQ |
|---|---|---|---|
ON Semiconductor / Fairchild |
FGY120T65SPD-F085 | IGBT Transistors 650V FS Trench IGBT Gen3 | |
| FGY120T65SPD | Жаңа және түпнұсқа | ||
| FGY120T65SPD_F085 | Trans IGBT Chip N-CH 650V 240A 3-Pin TO-247 Tube (Alt: FGY120T65SPD-F085) | ||
ON Semiconductor |
FGY120T65SPD-F085 | IGBT 650V 240A 882W TO-247 |