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| PartNumber | FGH50T65SQD-F155 | FGH50N3 | FGH50N6S2D |
| Description | IGBT Transistors 650V FS4 Trench IGBT | IGBT Transistors 300V PT N-Channel | IGBT Transistors Comp 600V N-Ch |
| Manufacturer | ON Semiconductor | ON Semiconductor | ON Semiconductor |
| Product Category | IGBT Transistors | IGBT Transistors | IGBT Transistors |
| RoHS | Y | E | E |
| Technology | Si | Si | Si |
| Package / Case | TO-247-3 | TO-247-3 | TO-247-3 |
| Mounting Style | Through Hole | Through Hole | Through Hole |
| Configuration | Single | Single | Single |
| Collector Emitter Voltage VCEO Max | 650 V | 300 V | 600 V |
| Collector Emitter Saturation Voltage | 1.6 V | 1.3 V | 1.9 V |
| Maximum Gate Emitter Voltage | 20 V | 20 V | 20 V |
| Continuous Collector Current at 25 C | 100 A | 75 A | 75 A |
| Pd Power Dissipation | 268 W | 463 W | 463 W |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Maximum Operating Temperature | + 175 C | + 150 C | + 150 C |
| Series | FGH50T65SQD | FGH50N3 | FGH50N6S2D |
| Packaging | Tube | Tube | Tube |
| Continuous Collector Current Ic Max | 100 A | 75 A | 75 A |
| Brand | ON Semiconductor / Fairchild | ON Semiconductor / Fairchild | ON Semiconductor / Fairchild |
| Gate Emitter Leakage Current | +/- 400 nA | +/- 250 nA | +/- 250 nA |
| Product Type | IGBT Transistors | IGBT Transistors | IGBT Transistors |
| Factory Pack Quantity | 450 | 450 | 450 |
| Subcategory | IGBTs | IGBTs | IGBTs |
| Part # Aliases | FGH50T65SQD_F155 | FGH50N3_NL | FGH50N6S2D_NL |
| Unit Weight | 0.225401 oz | 0.225401 oz | 0.225401 oz |
| Height | - | 20.82 mm | 20.82 mm |
| Length | - | 15.87 mm | 15.87 mm |
| Width | - | 4.82 mm | 4.82 mm |
| Continuous Collector Current | - | 75 A | 75 A |