 | | | |
| PartNumber | FF150R12KE3G | FF150R12KE3GB2HOSA1 | FF150R12KE3B8BOSA1 |
| Description | IGBT Modules 1200V 150A DUAL | IGBT MODULE VCES 1200V 150A | MOD IGBT LOW PWR ECONO2-6 |
| Manufacturer | Infineon | - | - |
| Product Category | IGBT Modules | - | - |
| RoHS | N | - | - |
| Product | IGBT Silicon Modules | - | - |
| Configuration | Dual | - | - |
| Collector Emitter Voltage VCEO Max | 1200 V | - | - |
| Collector Emitter Saturation Voltage | 1.7 V | - | - |
| Continuous Collector Current at 25 C | 225 A | - | - |
| Gate Emitter Leakage Current | 400 nA | - | - |
| Pd Power Dissipation | 780 W | - | - |
| Package / Case | 62 mm | - | - |
| Minimum Operating Temperature | - 40 C | - | - |
| Maximum Operating Temperature | + 125 C | - | - |
| Packaging | Tray | - | - |
| Height | 30.5 mm | - | - |
| Length | 106.4 mm | - | - |
| Width | 61.4 mm | - | - |
| Brand | Infineon Technologies | - | - |
| Mounting Style | Chassis Mount | - | - |
| Maximum Gate Emitter Voltage | 20 V | - | - |
| Product Type | IGBT Modules | - | - |
| Factory Pack Quantity | 10 | - | - |
| Subcategory | IGBTs | - | - |
| Part # Aliases | FF150R12KE3GHOSA1 SP000100740 | - | - |
| Unit Weight | 12 oz | - | - |
| Өндіруші | Бөлім № | Сипаттама | RFQ |
|---|---|---|---|
Infineon Technologies |
FF150R12KE3G_B2 | IGBT Modules N-CH 1.2KV 225A | |
| FF150R12KE3G | IGBT Modules 1200V 150A DUAL | ||
| FF150R12KE3_B8 | IGBT Modules IGBT 1200V 150A | ||
| FF150R12KE3GHOSA1 | IGBT MODULE VCES 1200V 150A | ||
| FF150R12KE3_B8 | IGBT Modules IGBT 1200V 150A | ||
| FF150R12KE3G_B2 | IGBT Modules N-CH 1.2KV 225A | ||
| FF150R12KE3G | IGBT Modules 1200V 150A DUAL | ||
| FF150R12KE3GB2HOSA1 | IGBT MODULE VCES 1200V 150A | ||
| FF150R12KE3B8BOSA1 | MOD IGBT LOW PWR ECONO2-6 | ||
| FF150R12KE3 | Жаңа және түпнұсқа | ||
| FF150R12KE3G-B2 | Жаңа және түпнұсқа | ||
| FF150R12KE3GB2 | Жаңа және түпнұсқа | ||
| FF150R12KE3_B8ENG | Жаңа және түпнұсқа | ||
| FF150R12KE3G_B2,C-SERIE | IGBTs (Alt: SP000100759) | ||
| FF150R12KE3-B8 | Жаңа және түпнұсқа |