 |  | | |
| PartNumber | FF100R12RT4 | FF100R12RT4 , 1N5355 | FF100R12RT4 FF150R12RT4 |
| Description | IGBT Modules IGBT Module w/ IGBT & Diode | ||
| Manufacturer | Infineon | - | - |
| Product Category | IGBT Modules | - | - |
| RoHS | Y | - | - |
| Product | IGBT Silicon Modules | - | - |
| Collector Emitter Voltage VCEO Max | 1200 V | - | - |
| Collector Emitter Saturation Voltage | 2 V | - | - |
| Gate Emitter Leakage Current | 100 nA | - | - |
| Pd Power Dissipation | 555 W | - | - |
| Minimum Operating Temperature | - 40 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Packaging | Tray | - | - |
| Brand | Infineon Technologies | - | - |
| Maximum Gate Emitter Voltage | 20 V | - | - |
| Product Type | IGBT Modules | - | - |
| Factory Pack Quantity | 10 | - | - |
| Subcategory | IGBTs | - | - |
| Part # Aliases | FF100R12RT4HOSA1 SP000624754 | - | - |
| Unit Weight | 5.643834 oz | - | - |
| Өндіруші | Бөлім № | Сипаттама | RFQ |
|---|---|---|---|
Infineon Technologies |
FF100R12RT4 | IGBT Modules IGBT Module w/ IGBT & Diode | |
| FF100R12RT4HOSA1 | IGBT MODULE VCES 1700V 1000A | ||
| FF100R12RT4 | IGBT Modules IGBT Module w/ IGBT & Diode | ||
| FF100R12RT4 , 1N5355 | Жаңа және түпнұсқа | ||
| FF100R12RT4 FF150R12RT4 | Жаңа және түпнұсқа | ||
| FF100R12RT4/SL100H120TL | Жаңа және түпнұсқа |