FDU888

FDU8880 vs FDU8882

 
PartNumberFDU8880FDU8882
DescriptionMOSFET 30V 58A 10 OHM NCH PWR TRENCH MOSFETMOSFET 30V 55A 11 OHM NCH PWR TRENCH MOSFET
ManufacturerON SemiconductorON Semiconductor
Product CategoryMOSFETMOSFET
RoHSEE
TechnologySiSi
Mounting StyleThrough HoleThrough Hole
Package / CaseTO-220-3TO-220-3
Number of Channels1 Channel1 Channel
Transistor PolarityN-ChannelN-Channel
Vds Drain Source Breakdown Voltage30 V30 V
Id Continuous Drain Current58 A55 A
Rds On Drain Source Resistance10 mOhms11.5 mOhms
Vgs Gate Source Voltage20 V20 V
Minimum Operating Temperature- 55 C- 55 C
Maximum Operating Temperature+ 175 C+ 175 C
Pd Power Dissipation55 W55 W
ConfigurationSingleSingle
Channel ModeEnhancementEnhancement
PackagingTubeTube
Height16.3 mm16.3 mm
Length10.67 mm10.67 mm
Transistor Type1 N-Channel1 N-Channel
TypeMOSFETMOSFET
Width4.7 mm4.7 mm
BrandON Semiconductor / FairchildON Semiconductor / Fairchild
Fall Time33 ns25 ns
Product TypeMOSFETMOSFET
Rise Time91 ns82 ns
Factory Pack Quantity7575
SubcategoryMOSFETsMOSFETs
Typical Turn Off Delay Time38 ns40 ns
Typical Turn On Delay Time8 ns8 ns
Part # AliasesFDU8880_NLFDU8882_NL
Unit Weight0.139332 oz0.139332 oz
Өндіруші Бөлім № Сипаттама RFQ
ON Semiconductor / Fairchild
ON Semiconductor / Fairchild
FDU8880 MOSFET 30V 58A 10 OHM NCH PWR TRENCH MOSFET
FDU8882 MOSFET 30V 55A 11 OHM NCH PWR TRENCH MOSFET
ON Semiconductor
ON Semiconductor
FDU8880 MOSFET N-CH 30V 58A I-PAK
FDU8882 MOSFET N-CH 30V 55A I-PAK
FDU8880.. Жаңа және түпнұсқа
FDU8880_NF071 Жаңа және түпнұсқа
FDU8880_NL Жаңа және түпнұсқа
FDU8882_NL Жаңа және түпнұсқа
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