 |  | | |
| PartNumber | FDR6580 | FDR6580P | FDR6674 |
| Description | MOSFET SSOT-8 N-CH 2.5V | ||
| Manufacturer | ON Semiconductor | - | - |
| Product Category | MOSFET | - | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | SSOT-8 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 20 V | - | - |
| Id Continuous Drain Current | 11.2 A | - | - |
| Rds On Drain Source Resistance | 5.2 mOhms | - | - |
| Vgs Gate Source Voltage | 12 V | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Pd Power Dissipation | 1.8 W | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Packaging | Reel | - | - |
| Height | 1.02 mm | - | - |
| Length | 4.06 mm | - | - |
| Product | MOSFET Small Signal | - | - |
| Transistor Type | 1 N-Channel | - | - |
| Type | MOSFET | - | - |
| Width | 3.3 mm | - | - |
| Brand | ON Semiconductor / Fairchild | - | - |
| Forward Transconductance Min | 70 S | - | - |
| Fall Time | 20 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 20 ns | - | - |
| Factory Pack Quantity | 3000 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 62 ns | - | - |
| Typical Turn On Delay Time | 15 ns | - | - |
| Part # Aliases | FDR6580_NL | - | - |
| Unit Weight | 0.001467 oz | - | - |
| Өндіруші | Бөлім № | Сипаттама | RFQ |
|---|---|---|---|
ON Semiconductor / Fairchild |
FDR6580 | MOSFET SSOT-8 N-CH 2.5V | |
ON Semiconductor |
FDR6580 | MOSFET N-CH 20V 11.2A SSOT-8 | |
| FDR6674A | MOSFET N-CH 30V 11.5A SSOT-8 | ||
| FDR6580P | Жаңа және түпнұсқа | ||
| FDR6674 | Жаңа және түпнұсқа | ||
| FDR6674A-NL | Жаңа және түпнұсқа | ||
| FDR6674R | Жаңа және түпнұсқа | ||
| FDR6675R | Жаңа және түпнұсқа | ||
| FDR6678A | MOSFET SSOT-8 N-CH 30V | ||
| FDR6678AF40 | Жаңа және түпнұсқа |