 |  | | |
| PartNumber | FDP8D5N10C | FDP8896 | FDP8N50NZ |
| Description | MOSFET FET 100V 76A 8.5 mOhm | MOSFET 30V N-Channel PowerTrench | MOSFET UNIFET2 500V |
| Manufacturer | ON Semiconductor | ON Semiconductor | ON Semiconductor |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | Y | Y |
| Technology | Si | Si | Si |
| Mounting Style | Through Hole | Through Hole | Through Hole |
| Package / Case | TO-220-3 | TO-220-3 | TO-220-3 |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 100 V | 30 V | 500 V |
| Id Continuous Drain Current | 76 A | 92 A | 8 A |
| Rds On Drain Source Resistance | 8.5 mOhms | 59 mOhms | 770 mOhms |
| Vgs th Gate Source Threshold Voltage | 2 V | - | 5 V |
| Vgs Gate Source Voltage | 20 V | 20 V | - |
| Qg Gate Charge | 34 nC | - | 18 nC |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Maximum Operating Temperature | + 175 C | + 175 C | + 150 C |
| Pd Power Dissipation | 107 W | 80 W | 139 W |
| Configuration | Single | Single | Single |
| Channel Mode | Enhancement | Enhancement | Enhancement |
| Packaging | Tube | Tube | Tube |
| Brand | ON Semiconductor | ON Semiconductor / Fairchild | ON Semiconductor / Fairchild |
| Forward Transconductance Min | 68 S | - | 6.3 S |
| Fall Time | 4 ns | 44 ns | 60 ns |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 11 ns | 103 ns | 80 ns |
| Factory Pack Quantity | 800 | 800 | 1000 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 18 ns | 56 ns | 95 ns |
| Typical Turn On Delay Time | 12 ns | 9 ns | 45 ns |
| Tradename | - | PowerTrench | UniFET |
| Height | - | 16.3 mm | 16.3 mm |
| Length | - | 10.67 mm | 10.67 mm |
| Series | - | FDP8896 | FDP8N50NZ |
| Transistor Type | - | 1 N-Channel | 1 N-Channel |
| Type | - | MOSFET | - |
| Width | - | 4.7 mm | 4.7 mm |
| Part # Aliases | - | FDP8896_NL | - |
| Unit Weight | - | 0.063493 oz | 0.063493 oz |
| Өндіруші | Бөлім № | Сипаттама | RFQ |
|---|---|---|---|
ON Semiconductor |
FDP8D5N10C | MOSFET FET 100V 76A 8.5 mOhm | |
| FDP8896 | MOSFET N-CH 30V 92A TO-220AB | ||
| FDP8N50NZ | MOSFET N-CH 500V TO-220AB-3 | ||
| FDP8D5N10C | FET ENGR DEV-NOT REL | ||
ON Semiconductor / Fairchild |
FDP8896 | MOSFET 30V N-Channel PowerTrench | |
| FDP8N50NZ | MOSFET UNIFET2 500V | ||
| FDP8880,TO-220AB | Жаңа және түпнұсқа | ||
| FDP8880. | FET 30V 11.6 MOHM TO220 ROHS COMPLIANT: YES | ||
| FDP8880_NL | Жаңа және түпнұсқа | ||
| FDP8896_F085 | MOSFET 30V N-Channel PowerTrench MOSFET. (Transferred to alternate site. Please contact local reps fo | ||
| FDP8896_NL | Жаңа және түпнұсқа | ||
| FDP8N50NZ,FDP8N50, | Жаңа және түпнұсқа | ||
| FDP8N50NZ-FSC | Жаңа және түпнұсқа | ||
| FDP8N50NZF | Жаңа және түпнұсқа | ||
| FDP8N50NZU | Жаңа және түпнұсқа | ||
| FDP8N50NZ-- | Жаңа және түпнұсқа |