 |  | | |
| PartNumber | FDP3632 | FDP3632 80N10 | FDP3632,FDP3682,FDP038AN |
| Description | MOSFET 100V 80a .9 Ohms/VGS=1V | ||
| Manufacturer | ON Semiconductor | - | - |
| Product Category | MOSFET | - | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | Through Hole | - | - |
| Package / Case | TO-220-3 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 100 V | - | - |
| Id Continuous Drain Current | 80 A | - | - |
| Rds On Drain Source Resistance | 7.5 mOhms | - | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 175 C | - | - |
| Pd Power Dissipation | 310 W | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Packaging | Tube | - | - |
| Height | 16.3 mm | - | - |
| Length | 10.67 mm | - | - |
| Series | FDP3632 | - | - |
| Transistor Type | 1 N-Channel | - | - |
| Type | MOSFET | - | - |
| Width | 4.7 mm | - | - |
| Brand | ON Semiconductor / Fairchild | - | - |
| Fall Time | 46 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 39 ns | - | - |
| Factory Pack Quantity | 800 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 96 ns | - | - |
| Typical Turn On Delay Time | 30 ns | - | - |
| Part # Aliases | FDP3632_NL | - | - |
| Unit Weight | 0.063493 oz | - | - |
| Өндіруші | Бөлім № | Сипаттама | RFQ |
|---|---|---|---|
ON Semiconductor / Fairchild |
FDP3632 | MOSFET 100V 80a .9 Ohms/VGS=1V | |
ON Semiconductor |
FDP3632 | MOSFET N-CH 100V 80A TO-220AB | |
| FDP3632 80N10 | Жаңа және түпнұсқа | ||
| FDP3632,FDP3682,FDP038AN | Жаңа және түпнұсқа | ||
| FDP3632,FDP3682,FDP038AN06AO,FDP025N06, | Жаңа және түпнұсқа | ||
| FDP3632,FDP3682,FDP3205, | Жаңа және түпнұсқа | ||
| FDP3632-NL | Жаңа және түпнұсқа | ||
| FDP3632_Q | MOSFET 100V 80a .9 Ohms/VGS=1V |