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| PartNumber | FDMS9409L-F085 | FDMS9409-F085 | FDMS9409_F085 |
| Description | MOSFET N-Channel Power Trench MOSFET | MOSFET 40V 65A N-Chnl Power Trench MOSFET | N-CHANNEL POWER TRENCH MOSFET |
| Manufacturer | ON Semiconductor | ON Semiconductor | Fairchild Semiconductor |
| Product Category | MOSFET | MOSFET | Transistors - FETs, MOSFETs - Single |
| RoHS | Y | Y | - |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | Power-56-8 | Power-56-8 | - |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 40 V | 40 V | - |
| Id Continuous Drain Current | 65 A | 65 A | - |
| Rds On Drain Source Resistance | 2.3 mOhms | 5.6 mOhms | - |
| Vgs th Gate Source Threshold Voltage | 1 V | 2 V | - |
| Vgs Gate Source Voltage | 20 V | 20 V | - |
| Qg Gate Charge | 70 nC | 41 nC | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Maximum Operating Temperature | + 175 C | + 175 C | + 175 C |
| Pd Power Dissipation | 100 W | 100 W | - |
| Configuration | Single | Single | Single |
| Channel Mode | Enhancement | Enhancement | Enhancement |
| Qualification | AEC-Q101 | AEC-Q101 | - |
| Packaging | Reel | Reel | Reel |
| Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
| Brand | ON Semiconductor / Fairchild | ON Semiconductor / Fairchild | - |
| Fall Time | 8 ns | 8 ns | 8 ns |
| Product Type | MOSFET | MOSFET | - |
| Rise Time | 7 ns | 10 ns | 10 ns |
| Factory Pack Quantity | 3000 | 3000 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Typical Turn Off Delay Time | 35 ns | 27 ns | 27 ns |
| Typical Turn On Delay Time | 12 ns | 16 ns | 16 ns |
| Part # Aliases | FDMS9409L_F085 | FDMS9409_F085 | - |
| Unit Weight | 0.006095 oz | 0.006095 oz | 0.008818 oz |
| Tradename | - | PowerTrench | PowerTrench |
| Height | - | 1.1 mm | - |
| Length | - | 6 mm | - |
| Series | - | FDMS9409_F085 | PowerTrench |
| Width | - | 5 mm | - |
| Package Case | - | - | Power-56-8 |
| Pd Power Dissipation | - | - | 100 W |
| Vgs Gate Source Voltage | - | - | +/- 20 V |
| Id Continuous Drain Current | - | - | 65 A |
| Vds Drain Source Breakdown Voltage | - | - | 40 V |
| Vgs th Gate Source Threshold Voltage | - | - | 2 V |
| Rds On Drain Source Resistance | - | - | 5.6 mOhms |
| Qg Gate Charge | - | - | 41 nC |
| Өндіруші | Бөлім № | Сипаттама | RFQ |
|---|---|---|---|
ON Semiconductor / Fairchild |
FDMS9409L-F085 | MOSFET N-Channel Power Trench MOSFET | |
| FDMS9409-F085 | MOSFET 40V 65A N-Chnl Power Trench MOSFET | ||
| FDMS9409_F085 | N-CHANNEL POWER TRENCH MOSFET | ||
ON Semiconductor |
FDMS9409-F085 | MOSFET N-CH 40V 65A | |
| FDMS9409L-F085 | NMOS PWR56 40V 2.8 MOHM |