FDI8

FDI8442 vs FDI8441 vs FDI8441_F085

 
PartNumberFDI8442FDI8441FDI8441_F085
DescriptionMOSFET 40V N-Channel PowerTrenchMOSFET N-CH 40V 80A TO-262ABMOSFET N-CH 40V 26A TO-262AB
ManufacturerON Semiconductor--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleThrough Hole--
Package / CaseTO-262-3--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage40 V--
Id Continuous Drain Current23 A--
Rds On Drain Source Resistance2.9 mOhms--
Vgs Gate Source Voltage20 V--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 175 C--
Pd Power Dissipation254 W--
ConfigurationSingle--
Channel ModeEnhancement--
PackagingTube--
Height7.88 mm--
Length10.29 mm--
Transistor Type1 N-Channel--
Width4.83 mm--
BrandON Semiconductor / Fairchild--
Fall Time17.2 ns--
Product TypeMOSFET--
Rise Time19.3 ns--
Factory Pack Quantity400--
SubcategoryMOSFETs--
Typical Turn Off Delay Time57 ns--
Typical Turn On Delay Time19.5 ns--
Unit Weight0.084199 oz--
  • -ден бастаңыз
  • FDI8 3
  • FDI 49
Өндіруші Бөлім № Сипаттама RFQ
ON Semiconductor / Fairchild
ON Semiconductor / Fairchild
FDI8442 MOSFET 40V N-Channel PowerTrench
ON Semiconductor
ON Semiconductor
FDI8441 MOSFET N-CH 40V 80A TO-262AB
FDI8441_F085 MOSFET N-CH 40V 26A TO-262AB
FDI8442 MOSFET N-CH 40V 80A TO-262
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