FDB10AN06A

FDB10AN06A0 vs FDB10AN06A0-NL vs FDB10AN06AO

 
PartNumberFDB10AN06A0FDB10AN06A0-NLFDB10AN06AO
DescriptionMOSFET N-Channel PowerTrench
ManufacturerON Semiconductor--
Product CategoryMOSFET--
RoHSE--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseTO-263-3--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage60 V--
Id Continuous Drain Current75 A--
Rds On Drain Source Resistance9.5 mOhms--
Vgs Gate Source Voltage20 V--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 175 C--
Pd Power Dissipation135 W--
ConfigurationSingle--
Channel ModeEnhancement--
PackagingReel--
Height4.83 mm--
Length10.67 mm--
Transistor Type1 N-Channel--
TypeMOSFET--
Width9.65 mm--
BrandON Semiconductor / Fairchild--
Fall Time36 ns--
Product TypeMOSFET--
Rise Time128 ns--
Factory Pack Quantity800--
SubcategoryMOSFETs--
Typical Turn Off Delay Time27 ns--
Typical Turn On Delay Time8 ns--
Unit Weight0.011640 oz--
Өндіруші Бөлім № Сипаттама RFQ
ON Semiconductor / Fairchild
ON Semiconductor / Fairchild
FDB10AN06A0 MOSFET N-Channel PowerTrench
ON Semiconductor
ON Semiconductor
FDB10AN06A0 MOSFET N-CH 60V 75A TO-263AB
FDB10AN06A0-NL Жаңа және түпнұсқа
FDB10AN06AO Жаңа және түпнұсқа
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