FDB024N08

FDB024N08BL7 vs FDB024N08B vs FDB024N08B7L

 
PartNumberFDB024N08BL7FDB024N08BFDB024N08B7L
DescriptionMOSFET 80V N-Channel PowerTrench MOSFET
ManufacturerON Semiconductor--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseTO-263-7--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage80 V--
Id Continuous Drain Current229 A--
Rds On Drain Source Resistance2.4 mOhms--
Vgs th Gate Source Threshold Voltage4.5 V--
Vgs Gate Source Voltage20 V--
Qg Gate Charge137 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 175 C--
Pd Power Dissipation246 W--
ConfigurationSingle--
Channel ModeEnhancement--
TradenamePowerTrench--
PackagingReel--
Height4.7 mm--
Length10.2 mm--
SeriesFDB024N08BL7--
Transistor Type1 N-Channel--
Width9.4 mm--
BrandON Semiconductor / Fairchild--
Forward Transconductance Min227 S--
Fall Time41 ns--
Product TypeMOSFET--
Rise Time66 ns--
Factory Pack Quantity800--
SubcategoryMOSFETs--
Typical Turn Off Delay Time41 ns--
Typical Turn On Delay Time47 ns--
Unit Weight0.046279 oz--
Өндіруші Бөлім № Сипаттама RFQ
ON Semiconductor / Fairchild
ON Semiconductor / Fairchild
FDB024N08BL7 MOSFET 80V N-Channel PowerTrench MOSFET
FDB024N08B Жаңа және түпнұсқа
FDB024N08B7L Жаңа және түпнұсқа
ON Semiconductor
ON Semiconductor
FDB024N08BL7 MOSFET N-CH 80V 120A D2PAK7
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