FCP2

FCP260N60E vs FCP290N80 vs FCP260N65S3

 
PartNumberFCP260N60EFCP290N80FCP260N65S3
DescriptionMOSFET PWM Controller mWSaverMOSFET 800V SuperFET2 N-Chnl MosfetMOSFET SUPERFET3 650V TO220 PKG
ManufacturerON SemiconductorON SemiconductorON Semiconductor
Product CategoryMOSFETMOSFETMOSFET
RoHSYYY
TechnologySiSiSi
Mounting StyleThrough HoleThrough HoleThrough Hole
Package / CaseTO-220-3TO-220-3TO-220-3
Number of Channels1 Channel1 Channel1 Channel
Transistor PolarityN-ChannelN-ChannelN-Channel
Vds Drain Source Breakdown Voltage650 V800 V650 V
Id Continuous Drain Current15 A17 A12 A
Rds On Drain Source Resistance260 mOhms290 mOhms260 mOhms
Vgs th Gate Source Threshold Voltage3.5 V2.5 V2.5 V
Vgs Gate Source Voltage20 V20 V, 30 V30 V
Qg Gate Charge48 nC58 nC24 nC
Minimum Operating Temperature- 55 C- 55 C- 55 C
Maximum Operating Temperature+ 150 C+ 150 C+ 150 C
Pd Power Dissipation156 W212 W90 W
ConfigurationSingleSingleSingle
TradenameSuperFET IISuperFET II-
PackagingTubeTubeTube
Height16.3 mm16.3 mm-
Length10.67 mm10.67 mm-
ProductMOSFET--
SeriesFCP260N60EFCP290N80SuperFET3
Transistor Type1 N-Channel1 N-Channel1 N-Channel SuperFET III MOSFET
Width4.7 mm4.7 mm-
BrandON Semiconductor / FairchildON Semiconductor / FairchildON Semiconductor
Forward Transconductance Min15.5 S20 S-
Fall Time13 ns2.6 ns12 ns
Product TypeMOSFETMOSFETMOSFET
Rise Time11 ns14 ns18 ns
Factory Pack Quantity800800800
SubcategoryMOSFETsMOSFETsMOSFETs
Typical Turn Off Delay Time13 ns61 ns49 ns
Typical Turn On Delay Time20 ns22 ns18 ns
Unit Weight0.063493 oz0.063493 oz-
Channel Mode-EnhancementEnhancement
  • -ден бастаңыз
  • FCP2 45
  • FCP 519
Өндіруші Бөлім № Сипаттама RFQ
ON Semiconductor / Fairchild
ON Semiconductor / Fairchild
FCP290N80 MOSFET 800V SuperFET2 N-Chnl Mosfet
ON Semiconductor
ON Semiconductor
FCP260N65S3 MOSFET SUPERFET3 650V TO220 PKG
FCP260N60E MOSFET N CH 600V 15A TO-220
FCP260N65S3 MOSFET N-CH 650V 260MOHM TO220
FCP290N80 MOSFET N-CH 800V 17A TO220
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