 |  | | |
| PartNumber | FC4B21300L1 | FC4B21300L | FC4B21320L |
| Description | MOSFET Gate res integrated Dual Nch MOSFET | ||
| Manufacturer | Panasonic | - | - |
| Product Category | MOSFET | - | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | CSP-4 | - | - |
| Number of Channels | 2 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 12 V | - | - |
| Id Continuous Drain Current | 1.5 A, 2 A | - | - |
| Rds On Drain Source Resistance | 225 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 350 mV | - | - |
| Vgs Gate Source Voltage | 8 V | - | - |
| Qg Gate Charge | 1.7 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Pd Power Dissipation | 320 mW, 600 mW | - | - |
| Configuration | Dual | - | - |
| Channel Mode | Enhancement | - | - |
| Packaging | Reel | - | - |
| Series | FC4B | - | - |
| Transistor Type | 2 N-Channel | - | - |
| Brand | Panasonic | - | - |
| Fall Time | 0.22 us | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 0.2 us | - | - |
| Factory Pack Quantity | 1000 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 0.27 us | - | - |
| Typical Turn On Delay Time | 0.1 us | - | - |
| Өндіруші | Бөлім № | Сипаттама | RFQ |
|---|---|---|---|
Panasonic |
FC4B21300L1 | MOSFET Gate res integrated Dual Nch MOSFET | |
| FC4B21320L1 | MOSFET WL-CSP Dual Nchannel MOSFET | ||
| FC4B21300L | Жаңа және түпнұсқа | ||
| FC4B21320L | Жаңа және түпнұсқа | ||
| FC4B21330L | Жаңа және түпнұсқа | ||
Panasonic |
FC4B21300L1 | GATE RESISTOR INTEGRATED DUAL NC | |
| FC4B21320L1 | GATE RESISTOR INTEGRATED DUAL NC |