 |  | |
| PartNumber | DXT651-13 | DXT651Q-13 |
| Description | Bipolar Transistors - BJT BIPOLAR NPN | Bipolar Transistors - BJT Pwr Mid Perf Transistor |
| Manufacturer | Diodes Incorporated | Diodes Incorporated |
| Product Category | Bipolar Transistors - BJT | Bipolar Transistors - BJT |
| RoHS | Y | - |
| Mounting Style | SMD/SMT | SMD/SMT |
| Package / Case | SOT-89-3 | SOT-89-3 |
| Transistor Polarity | NPN | NPN |
| Configuration | Single | Single |
| Collector Emitter Voltage VCEO Max | 60 V | 60 V |
| Collector Base Voltage VCBO | 80 V | 80 V |
| Emitter Base Voltage VEBO | 5 V | 5 V |
| Maximum DC Collector Current | 3 A | 3 A |
| Gain Bandwidth Product fT | 200 MHz | 200 MHz |
| Minimum Operating Temperature | - 55 C | - 55 C |
| Maximum Operating Temperature | + 150 C | + 150 C |
| Series | DXT651 | - |
| Height | 1.5 mm | - |
| Length | 4.5 mm | - |
| Packaging | Reel | Reel |
| Width | 2.5 mm | - |
| Brand | Diodes Incorporated | Diodes Incorporated |
| Pd Power Dissipation | 1000 mW | 2 W |
| Product Type | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors |
| Factory Pack Quantity | 2500 | 2500 |
| Subcategory | Transistors | Transistors |
| Unit Weight | 0.001834 oz | - |
| Technology | - | Si |
| Collector Emitter Saturation Voltage | - | 0.23 V |
| DC Current Gain hFE Max | - | 300 |
| Continuous Collector Current | - | 3 A |
| DC Collector/Base Gain hfe Min | - | 100 |
| Qualification | - | AEC-Q101 |
| Өндіруші | Бөлім № | Сипаттама | RFQ |
|---|---|---|---|
Diodes Incorporated |
DXT651-13 | Bipolar Transistors - BJT BIPOLAR NPN | |
| DXT651Q-13 | Bipolar Transistors - BJT Pwr Mid Perf Transistor | ||
| DXT651Q-13 | PWR MID PERF TRANSISTOR SOT89 | ||
| DXT651-13 | Bipolar Transistors - BJT BIPOLAR NPN | ||
| DXT651 | Жаңа және түпнұсқа | ||
| DXT651- | Жаңа және түпнұсқа | ||
| DXT651-13-90 | Жаңа және түпнұсқа | ||
| DXT651-13-73 | Жаңа және түпнұсқа | ||
| DXT651-13-F | Жаңа және түпнұсқа | ||
| DXT651-13R | Жаңа және түпнұсқа |