 |  | | |
| PartNumber | DTC123JET1G | DTC123JET1G-CUT TAPE | DTC123JET1G , XC6382C701 |
| Description | Bipolar Transistors - Pre-Biased 100mA 50V BRT NPN | ||
| Manufacturer | ON Semiconductor | - | - |
| Product Category | Bipolar Transistors - Pre-Biased | - | - |
| RoHS | Y | - | - |
| Configuration | Single | - | - |
| Transistor Polarity | NPN | - | - |
| Typical Input Resistor | 2.2 kOhms | - | - |
| Typical Resistor Ratio | 0.047 | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | SC-75-3 | - | - |
| DC Collector/Base Gain hfe Min | 80 | - | - |
| Collector Emitter Voltage VCEO Max | 50 V | - | - |
| Continuous Collector Current | 0.1 A | - | - |
| Peak DC Collector Current | 100 mA | - | - |
| Pd Power Dissipation | 200 mW | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Series | DTC123JE | - | - |
| Packaging | Reel | - | - |
| DC Current Gain hFE Max | 80 | - | - |
| Height | 0.75 mm | - | - |
| Length | 1.6 mm | - | - |
| Width | 0.8 mm | - | - |
| Brand | ON Semiconductor | - | - |
| Product Type | BJTs - Bipolar Transistors - Pre-Biased | - | - |
| Factory Pack Quantity | 3000 | - | - |
| Subcategory | Transistors | - | - |
| Unit Weight | 0.000089 oz | - | - |
| Өндіруші | Бөлім № | Сипаттама | RFQ |
|---|---|---|---|
| DTC123JETL | Bipolar Transistors - Pre-Biased NPN 50V 100MA SOT-416 | ||
| DTC123JET1G | Bipolar Transistors - Pre-Biased 100mA 50V BRT NPN | ||
| DTC123JET1G-CUT TAPE | Жаңа және түпнұсқа | ||
| DTC123JETLV | Жаңа және түпнұсқа | ||
| DTC123JETL | TRANS PREBIAS NPN 150MW EMT3 | ||
| DTC123JET1G , XC6382C701 | Жаңа және түпнұсқа | ||
| DTC123JETL , MAX810SXR | Жаңа және түпнұсқа | ||
ON Semiconductor |
DTC123JET1 | Bipolar Transistors - Pre-Biased 100mA 50V BRT NPN | |
| DTC123JET1G | Bipolar Transistors - Pre-Biased 100mA 50V BRT NPN | ||
| DTC123JET1 | TRANS PREBIAS NPN 200MW SC75 |