OMO ElectronicOMO Electronic
Expand menu
0 Арба

DSS414

DSS4140U-7 vs DSS4140V-7 vs DSS4140U

 
PartNumberDSS4140U-7DSS4140V-7DSS4140U
DescriptionBipolar Transistors - BJT LOW VCE(SAT) NPN SMTBipolar Transistors - BJT LOW VCE(SAT) NPN SMT
ManufacturerDiodes IncorporatedDiodes IncorporatedDIDDES
Product CategoryBipolar Transistors - BJTBipolar Transistors - BJTTransistors (BJT) - Single
RoHSYY-
Mounting StyleSMD/SMTSMD/SMTSMD/SMT
Package / CaseSOT-323-3SOT-563-6-
Transistor PolarityNPNNPNNPN
ConfigurationSingleSingleSingle
Collector Emitter Voltage VCEO Max40 V40 V-
Collector Base Voltage VCBO40 V40 V-
Emitter Base Voltage VEBO5 V5 V-
Collector Emitter Saturation Voltage500 mV-500 mV
Maximum DC Collector Current2 A1 A2 A
Gain Bandwidth Product fT150 MHz150 MHz150 MHz
Minimum Operating Temperature- 55 C- 55 C- 55 C
Maximum Operating Temperature+ 150 C+ 150 C+ 150 C
SeriesDSS41DSS41DSS41
DC Current Gain hFE Max300 at 1 mA, 5 V300 at 1 mA, 5 V300 at 1 mA at 5 V
Height1 mm0.6 mm-
Length2.15 mm1.6 mm-
PackagingReelReelReel
Width1.3 mm1.2 mm-
BrandDiodes IncorporatedDiodes Incorporated-
DC Collector/Base Gain hfe Min200 at 1 A, 5 V300 at 1 mA, 5 V, 300 at 500 mA, 5 V, 200 at 1 A, 5 V, 75 at 2 A, 5 V-
Pd Power Dissipation400 mW600 mW-
Product TypeBJTs - Bipolar TransistorsBJTs - Bipolar Transistors-
Factory Pack Quantity30003000-
SubcategoryTransistorsTransistors-
Unit Weight0.000176 oz0.000106 oz0.000212 oz
Package Case--SOT-323
Pd Power Dissipation--400 mW
Collector Emitter Voltage VCEO Max--40 V
Collector Base Voltage VCBO--40 V
Emitter Base Voltage VEBO--5 V
DC Collector Base Gain hfe Min--200 at 1 A 5 V
Өндіруші Бөлім № Сипаттама RFQ
Diodes Incorporated
Diodes Incorporated 		DSS4140U-7 Bipolar Transistors - BJT LOW VCE(SAT) NPN SMT
DSS4140V-7 Bipolar Transistors - BJT LOW VCE(SAT) NPN SMT
DSS4140V-7 Bipolar Transistors - BJT LOW VCE(SAT) NPN SMT
DSS4140U-7 Bipolar Transistors - BJT LOW VCE(SAT) NPN SMT
DSS4140U Жаңа және түпнұсқа
Top