DN3145N8

DN3145N8-G vs DN3145N8 vs DN3145N8-G-CUT TAPE

 
PartNumberDN3145N8-GDN3145N8DN3145N8-G-CUT TAPE
DescriptionMOSFET 450V 60OhmMOSFET 450V 60Ohm
ManufacturerMicrochipMicrochip Technology-
Product CategoryMOSFETFETs - Single-
RoHSY--
TechnologySiSi-
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseSOT-89-3--
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage450 V--
Id Continuous Drain Current100 mA--
Rds On Drain Source Resistance60 Ohms--
Vgs Gate Source Voltage20 V--
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
Pd Power Dissipation1.3 W--
ConfigurationSingleSingle-
Channel ModeDepletionDepletion-
PackagingReelDigi-ReelR Alternate Packaging-
Height1.6 mm--
Length4.6 mm--
ProductMOSFET Small Signal--
Transistor Type1 N-Channel1 N-Channel-
TypeFET--
Width2.6 mm--
BrandMicrochip Technology--
Fall Time15 ns15 ns-
Product TypeMOSFET--
Rise Time15 ns15 ns-
Factory Pack Quantity2000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time20 ns20 ns-
Typical Turn On Delay Time10 ns10 ns-
Unit Weight0.001862 oz0.001862 oz-
Series---
Package Case-TO-243AA-
Operating Temperature--55°C ~ 150°C (TJ)-
Mounting Type-Surface Mount-
Supplier Device Package-TO-243AA (SOT-89)-
FET Type-MOSFET N-Channel, Metal Oxide-
Power Max-1.3W-
Drain to Source Voltage Vdss-450V-
Input Capacitance Ciss Vds-120pF @ 25V-
FET Feature-Depletion Mode-
Current Continuous Drain Id 25°C-100mA (Tj)-
Rds On Max Id Vgs-60 Ohm @ 100mA, 0V-
Vgs th Max Id---
Gate Charge Qg Vgs---
Pd Power Dissipation-1.3 W-
Vgs Gate Source Voltage-20 V-
Id Continuous Drain Current-100 mA-
Vds Drain Source Breakdown Voltage-450 V-
Rds On Drain Source Resistance-60 Ohms-
Өндіруші Бөлім № Сипаттама RFQ
Microchip Technology
Microchip Technology
DN3145N8-G MOSFET 450V 60Ohm
DN3145N8 MOSFET 450V 60Ohm
DN3145N8-G MOSFET N-CH 450V 0.1A SOT89-3
DN3145N8-G-CUT TAPE Жаңа және түпнұсқа
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