| PartNumber | DMTH6010LPD-13 | DMTH6010LPS-13 | DMTH6010LPSQ-13 |
| Description | MOSFET MOSFET BVDSS: 41V-60V | MOSFET 60V 175c N-Ch FET 20Vgss 2.6W 2090pF | MOSFET 60V 175c N-Ch FET 8mOhm 10Vgs 100A |
| Manufacturer | Diodes Incorporated | Diodes Incorporated | Diodes Incorporated |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | Y | Y |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | PowerDI5060-C-8 | PowerDI5060-8 | PowerDI5060-8 |
| Packaging | Reel | Reel | Reel |
| Series | DMTH6010 | DMTH6010 | DMTH6010 |
| Brand | Diodes Incorporated | Diodes Incorporated | Diodes Incorporated |
| Product Type | MOSFET | MOSFET | MOSFET |
| Factory Pack Quantity | 2500 | 2500 | 2500 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Unit Weight | 0.004092 oz | 0.003386 oz | 0.003386 oz |
| Number of Channels | - | 1 Channel | 1 Channel |
| Transistor Polarity | - | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | - | 60 V | 60 V |
| Id Continuous Drain Current | - | 100 A | 13.5 A |
| Rds On Drain Source Resistance | - | 8 mOhms | 6.4 mOhms |
| Vgs th Gate Source Threshold Voltage | - | 3 V | 1 V |
| Vgs Gate Source Voltage | - | 10 V | 20 V |
| Qg Gate Charge | - | 41.3 nC | 41.3 nC |
| Minimum Operating Temperature | - | - 55 C | - 55 C |
| Maximum Operating Temperature | - | + 175 C | + 175 C |
| Pd Power Dissipation | - | 2.6 W | 136 W |
| Configuration | - | Single | Single |
| Channel Mode | - | Enhancement | Enhancement |
| Tradename | - | PowerDI | - |
| Height | - | 1 mm | - |
| Length | - | 5.8 mm | - |
| Transistor Type | - | 1 N-Channel | 1 N-Channel |
| Width | - | 4.9 mm | - |
| Fall Time | - | 9.7 ns | 9.7 ns |
| Rise Time | - | 4.3 ns | 4.3 ns |
| Typical Turn Off Delay Time | - | 23.4 ns | 23.4 ns |
| Typical Turn On Delay Time | - | 5.7 ns | 5.7 ns |
| Qualification | - | - | AEC-Q101 |