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| PartNumber | DMTH6016LFVWQ-7 | DMTH6016LFVW-7 | DMTH6016LFVWQ-13 |
| Description | MOSFET MOSFET BVDSS: 41V-60V | MOSFET MOSFET BVDSS: 41V-60V | MOSFET MOSFET BVDSS: 41V-60V |
| Manufacturer | Diodes Incorporated | Diodes Incorporated | Diodes Incorporated |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | - | Y |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | - | SMD/SMT |
| Package / Case | PowerDI-3333-8 | - | PowerDI-3333-8 |
| Number of Channels | 1 Channel | - | 1 Channel |
| Transistor Polarity | N-Channel | - | N-Channel |
| Vds Drain Source Breakdown Voltage | 60 V | - | 60 V |
| Id Continuous Drain Current | 41 A | - | 41 A |
| Rds On Drain Source Resistance | 16 mOhms | - | 16 mOhms |
| Vgs th Gate Source Threshold Voltage | 1 V | - | 1 V |
| Vgs Gate Source Voltage | 20 V | - | 20 V |
| Qg Gate Charge | 15.1 nC | - | 15.1 nC |
| Minimum Operating Temperature | - 55 C | - | - 55 C |
| Maximum Operating Temperature | + 175 C | - | + 175 C |
| Pd Power Dissipation | 2.38 W | - | 2.38 W |
| Configuration | Single | - | Single |
| Channel Mode | Enhancement | - | Enhancement |
| Qualification | AEC-Q101 | - | AEC-Q101 |
| Packaging | Reel | Reel | Reel |
| Series | DMTH6016 | DMTH6016 | DMTH6016 |
| Transistor Type | 1 N-Channel | - | 1 N-Channel |
| Brand | Diodes Incorporated | Diodes Incorporated | Diodes Incorporated |
| Fall Time | 5.9 ns | - | 5.9 ns |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 6.3 ns | - | 6.3 ns |
| Factory Pack Quantity | 2000 | 2000 | 3000 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 14.3 ns | - | 14.3 ns |
| Typical Turn On Delay Time | 3.9 ns | - | 3.9 ns |