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| PartNumber | DMTH10H010SPS-13 | DMTH10H010SPSQ-13 | DMTH10H010SCT |
| Description | MOSFET MOSFET BVDSS: 61V-100V | MOSFET MOSFET BVDSS: 61V~100V PowerDI5060-8 T&R 2.5K | MOSFET MOSFET BVDSS: 61V-100V |
| Manufacturer | Diodes Incorporated | Diodes Incorporated | Diodes Incorporated |
| Product Category | MOSFET | MOSFET | MOSFET |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT | Through Hole |
| Package / Case | PowerDI5060-8 | PowerDI5060-8 | TO-220AB-3 |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 100 V | 100 V | 100 V |
| Id Continuous Drain Current | 123 A | 100 A | 100 A |
| Rds On Drain Source Resistance | 8.8 mOhms | 8.8 mOhms | 9.5 mOhms |
| Vgs th Gate Source Threshold Voltage | 2 V | 2 V | 2 V |
| Vgs Gate Source Voltage | 20 V | 20 V | 20 V |
| Qg Gate Charge | 56.4 nC | 56.4 nC | 56.4 nC |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Maximum Operating Temperature | + 175 C | + 175 C | + 175 C |
| Pd Power Dissipation | 166 W | 166 W | 187 W |
| Configuration | Single | Single | Single |
| Channel Mode | Enhancement | Enhancement | Enhancement |
| Packaging | Reel | Reel | Tube |
| Series | DMTH10H010 | DMTH10H010 | DMTH10H010 |
| Brand | Diodes Incorporated | Diodes Incorporated | Diodes Incorporated |
| Fall Time | 29.5 ns | 29.5 ns | 29.5 ns |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 22.5 ns | 22.5 ns | 22.5 ns |
| Factory Pack Quantity | 2500 | 2500 | 50 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 44.8 ns | 44.8 ns | 44.8 ns |
| Typical Turn On Delay Time | 18.6 ns | 18.6 ns | 18.6 ns |
| Unit Weight | 0.003422 oz | 0.003422 oz | 0.065257 oz |
| RoHS | - | Y | - |
| Qualification | - | AEC-Q101 | - |