DMP58D0S

DMP58D0SV-7 vs DMP58D0SV vs DMP58D0SV-7-F

 
PartNumberDMP58D0SV-7DMP58D0SVDMP58D0SV-7-F
DescriptionMOSFET PMOS-Dual
ManufacturerDiodes IncorporatedDiodes Incorporated-
Product CategoryMOSFETFETs - Arrays-
RoHSY--
TechnologySiSi-
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseSOT-563-6--
Number of Channels2 Channel2 Channel-
Transistor PolarityP-ChannelP-Channel-
Vds Drain Source Breakdown Voltage50 V--
Id Continuous Drain Current160 mA--
Rds On Drain Source Resistance8 Ohms--
Vgs Gate Source Voltage20 V--
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
Pd Power Dissipation400 mW--
ConfigurationDualDual-
Channel ModeEnhancementEnhancement-
PackagingReelDigi-ReelR Alternate Packaging-
Height0.6 mm--
Length1.6 mm--
ProductMOSFET Small Signal--
SeriesDMP58DMP58-
Transistor Type2 P-Channel2 P-Channel-
Width1.2 mm--
BrandDiodes Incorporated--
Product TypeMOSFET--
Factory Pack Quantity3000--
SubcategoryMOSFETs--
Unit Weight0.000106 oz0.000106 oz-
Package Case-SOT-563, SOT-666-
Operating Temperature--55°C ~ 150°C (TJ)-
Mounting Type-Surface Mount-
Supplier Device Package-SOT-563-
FET Type-2 P-Channel (Dual)-
Power Max-400mW-
Drain to Source Voltage Vdss-50V-
Input Capacitance Ciss Vds-27pF @ 25V-
FET Feature-Logic Level Gate-
Current Continuous Drain Id 25°C-160mA-
Rds On Max Id Vgs-8 Ohm @ 100mA, 5V-
Vgs th Max Id-2.1V @ 250μA-
Gate Charge Qg Vgs---
Pd Power Dissipation-400 mW-
Vgs Gate Source Voltage-20 V-
Id Continuous Drain Current-160 mA-
Vds Drain Source Breakdown Voltage-50 V-
Rds On Drain Source Resistance-8 Ohms-
Өндіруші Бөлім № Сипаттама RFQ
Diodes Incorporated
Diodes Incorporated
DMP58D0SV-7 MOSFET PMOS-Dual
DMP58D0SV Жаңа және түпнұсқа
DMP58D0SV-7 MOSFET 2P-CH 50V 0.16A SOT-563
DMP58D0SV-7-F Жаңа және түпнұсқа
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