DMP2066LSN-7

DMP2066LSN-7 vs DMP2066LSN-7 , WPMD2011- vs DMP2066LSN-7-F

 
PartNumberDMP2066LSN-7DMP2066LSN-7 , WPMD2011-DMP2066LSN-7-F
DescriptionMOSFET P-channel 1.25W
ManufacturerDiodes Incorporated--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseSC-59-3--
Number of Channels1 Channel--
Transistor PolarityP-Channel--
Vds Drain Source Breakdown Voltage20 V--
Id Continuous Drain Current4.6 A--
Rds On Drain Source Resistance40 mOhms--
Vgs th Gate Source Threshold Voltage600 mV--
Vgs Gate Source Voltage4.5 V--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation1.25 W--
ConfigurationSingle--
Channel ModeEnhancement--
PackagingReel--
Height1.3 mm--
Length3.1 mm--
ProductMOSFET Small Signal--
SeriesDMP2066--
Transistor Type1 P-Channel--
Width1.7 mm--
BrandDiodes Incorporated--
Forward Transconductance Min9 S--
Fall Time23.4 ns--
Product TypeMOSFET--
Rise Time9.9 ns--
Factory Pack Quantity3000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time28 ns--
Typical Turn On Delay Time4.4 ns--
Unit Weight0.000282 oz--
Өндіруші Бөлім № Сипаттама RFQ
Diodes Incorporated
Diodes Incorporated
DMP2066LSN-7 MOSFET P-channel 1.25W
DMP2066LSN-7 , WPMD2011- Жаңа және түпнұсқа
DMP2066LSN-7-F Жаңа және түпнұсқа
DMP2066LSN-7 Darlington Transistors MOSFET P-channel 1.25W
Top