| PartNumber | DMN67D7L-7 | DMN67D7L-13 | DMN67D8L-13 |
| Description | MOSFET MOSFET BVDSS: 41V-60V | MOSFET MOSFET BVDSS: 41V-60V | MOSFET MOSFET BVDSS |
| Manufacturer | Diodes Incorporated | Diodes Incorporated | Diodes Incorporated |
| Product Category | MOSFET | MOSFET | MOSFET |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | SOT-23-3 | SOT-23-3 | SO-8 |
| Number of Channels | 1 Channel | 1 Channel | - |
| Transistor Polarity | N-Channel | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 60 V | 60 V | - |
| Id Continuous Drain Current | 210 mA | 210 mA | - |
| Rds On Drain Source Resistance | 1.5 Ohms | 1.5 Ohms | - |
| Vgs th Gate Source Threshold Voltage | 800 mV | 800 mV | - |
| Vgs Gate Source Voltage | 10 V | 10 V | - |
| Qg Gate Charge | 821 pC | 821 pC | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 150 C | + 150 C | - |
| Pd Power Dissipation | 570 mW | 570 mW | - |
| Configuration | Single | Single | - |
| Channel Mode | Enhancement | Enhancement | - |
| Transistor Type | 1 N-Channel | 1 N-Channel | - |
| Brand | Diodes Incorporated | Diodes Incorporated | Diodes Incorporated |
| Fall Time | 5.6 ns | 5.6 ns | - |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 3 ns | 3 ns | - |
| Factory Pack Quantity | 3000 | 10000 | 10000 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 7.6 ns | 7.6 ns | - |
| Typical Turn On Delay Time | 2.8 ns | 2.8 ns | - |
| RoHS | - | - | Y |
| Packaging | - | - | Reel |
| Series | - | - | DMN67 |
| Unit Weight | - | - | 0.002610 oz |