DMN62D1LFD

DMN62D1LFD-7 vs DMN62D1LFD-13 vs DMN62D1LFDQ-7

 
PartNumberDMN62D1LFD-7DMN62D1LFD-13DMN62D1LFDQ-7
DescriptionMOSFET 60V N-Ch Enh FET 20Vgs 0.4A 32pFMOSFET 60V N-Ch Enh FET 20Vgs 0.4A 32pFMOSFET 2N7002 Family
ManufacturerDiodes IncorporatedDiodes IncorporatedDiodes Incorporated
Product CategoryMOSFETMOSFETMOSFET
RoHSYY-
TechnologySiSiSi
Mounting StyleSMD/SMTSMD/SMTSMD/SMT
Package / CaseX1-DFN1212-3X1-DFN1212-3U-DFN1212-3
Number of Channels1 Channel1 Channel1 Channel
Transistor PolarityN-ChannelN-ChannelN-Channel
Vds Drain Source Breakdown Voltage60 V60 V60 V
Id Continuous Drain Current400 mA400 mA400 mA
Rds On Drain Source Resistance1.4 Ohms1.4 Ohms2 Ohms
Vgs th Gate Source Threshold Voltage1 V1 V600 mV
Vgs Gate Source Voltage20 V20 V20 V
Qg Gate Charge550 pC550 pC0.55 nC
Minimum Operating Temperature- 55 C- 55 C- 55 C
Maximum Operating Temperature+ 150 C+ 150 C+ 150 C
Pd Power Dissipation500 mW (1/2 W)500 mW (1/2 W)0.5 W
ConfigurationSingleSingleSingle
Channel ModeEnhancementEnhancementEnhancement
PackagingReelReelReel
SeriesDMN62DDMN62D-
Transistor Type1 N-Channel1 N-Channel1 N-Channel
BrandDiodes IncorporatedDiodes IncorporatedDiodes Incorporated
Fall Time13.9 ns13.9 ns13.9 ns
Product TypeMOSFETMOSFETMOSFET
Rise Time2.8 ns2.8 ns2.8 ns
Factory Pack Quantity3000100003000
SubcategoryMOSFETsMOSFETsMOSFETs
Typical Turn Off Delay Time21 ns21 ns21 ns
Typical Turn On Delay Time2.1 ns2.1 ns2.1 ns
Qualification--AEC-Q101
Forward Transconductance Min--1.8 S
Өндіруші Бөлім № Сипаттама RFQ
Diodes Incorporated
Diodes Incorporated
DMN62D1LFD-7 MOSFET 60V N-Ch Enh FET 20Vgs 0.4A 32pF
DMN62D1LFD-13 MOSFET 60V N-Ch Enh FET 20Vgs 0.4A 32pF
DMN62D1LFDQ-7 MOSFET 2N7002 Family
DMN62D1LFD-7 Darlington Transistors MOSFET 60V N-Ch Enh FET 20Vgs 0.4A 32pF
DMN62D1LFD-13 MOSFET 60V N-Ch Enh FET 20Vgs 0.4A 32pF
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