 |  | | |
| PartNumber | DMN3200U-7 | DMN3270UVT-7 | DMN3270UVT-13 |
| Description | MOSFET 650mW 30Vdss | MOSFET MOSFET BVDSS: 25V-30V | MOSFET MOSFET BVDSS: 25V-30V |
| Manufacturer | Diodes Incorporated | Diodes Incorporated | Diodes Incorporated |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | - | - |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | SOT-23-3 | TSOT-26-6 | TSOT-26-6 |
| Number of Channels | 1 Channel | 2 Channel | 2 Channel |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 30 V | 30 V | 30 V |
| Id Continuous Drain Current | 2.2 A | 1.6 A | 1.6 A |
| Rds On Drain Source Resistance | 90 mOhms | 270 mOhms | 270 mOhms |
| Vgs Gate Source Voltage | 8 V | 5 V, - 500 mV | 5 V, - 500 mV |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
| Pd Power Dissipation | 650 mW | 1.08 W | 1.08 W |
| Configuration | Single | Dual | Dual |
| Channel Mode | Enhancement | Enhancement | Enhancement |
| Packaging | Reel | Reel | Reel |
| Height | 1 mm | - | - |
| Length | 2.9 mm | - | - |
| Product | MOSFET Small Signal | - | - |
| Series | DMN32 | - | - |
| Transistor Type | 1 N-Channel | - | - |
| Width | 1.3 mm | - | - |
| Brand | Diodes Incorporated | Diodes Incorporated | Diodes Incorporated |
| Product Type | MOSFET | MOSFET | MOSFET |
| Factory Pack Quantity | 3000 | 3000 | 10000 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Unit Weight | 0.000282 oz | 0.000459 oz | 0.000459 oz |
| Vgs th Gate Source Threshold Voltage | - | 350 mV | 350 mV |
| Qg Gate Charge | - | 3.07 nC | 3.07 nC |
| Fall Time | - | 674 ns | 674 ns |
| Rise Time | - | 205 ns | 205 ns |
| Typical Turn Off Delay Time | - | 1470 ns | 1470 ns |
| Typical Turn On Delay Time | - | 163 ns | 163 ns |
| Өндіруші | Бөлім № | Сипаттама | RFQ |
|---|---|---|---|
Diodes Incorporated |
DMN32D2LFB4-7 | MOSFET 350mW 30Vdss | |
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