DMN3013 stock, DMN3013, DMN3013LFG-7

DMN3013LDG-7 vs DMN3013LFG-13 vs DMN3013LDG-13


PartNumber	DMN3013LDG-7	DMN3013LFG-13	DMN3013LDG-13
Description	MOSFET MOSFET BVDSS: 25V-30V	MOSFET MOSFET BVDSS: 25V-30V	MOSFET MOSFET BVDSS: 25V-30V
Manufacturer	Diodes Incorporated	Diodes Incorporated	Diodes Incorporated
Product Category	MOSFET	MOSFET	MOSFET
Technology	Si	Si	Si
Mounting Style	SMD/SMT	SMD/SMT	SMD/SMT
Package / Case	PowerDI3333-8	PowerDI3333-8	PowerDI3333-8
Number of Channels	2 Channel	2 Channel	2 Channel
Transistor Polarity	N-Channel	N-Channel	N-Channel
Vds Drain Source Breakdown Voltage	30 V	30 V	30 V
Id Continuous Drain Current	15 A	15 A	15 A
Rds On Drain Source Resistance	14.3 mOhms	14.3 mOhms	14.3 mOhms
Vgs th Gate Source Threshold Voltage	750 mV	750 mV	750 mV
Vgs Gate Source Voltage	10 V	10 V	10 V
Qg Gate Charge	5.7 nC	5.7 nC	5.7 nC
Minimum Operating Temperature	- 55 C	- 55 C	- 55 C
Maximum Operating Temperature	+ 150 C	+ 150 C	+ 150 C
Pd Power Dissipation	2.16 W	2.16 W	2.16 W
Configuration	Dual	Dual	Dual
Channel Mode	Enhancement	Enhancement	Enhancement
Packaging	Reel	Reel	Reel
Brand	Diodes Incorporated	Diodes Incorporated	Diodes Incorporated
Fall Time	2 ns, 2.2 ns	2 ns, 2.2 ns	2 ns, 2.2 ns
Product Type	MOSFET	MOSFET	MOSFET
Rise Time	6.2 ns, 6.7 ns	6.2 ns, 6.7 ns	6.2 ns, 6.7 ns
Factory Pack Quantity	1000	3000	3000
Subcategory	MOSFETs	MOSFETs	MOSFETs
Typical Turn Off Delay Time	9.7 ns, 10.4 ns	9.7 ns, 10.4 ns	9.7 ns, 10.4 ns
Typical Turn On Delay Time	4.2 ns, 4.4 ns	4.2 ns, 4.4 ns	4.2 ns, 4.4 ns
Unit Weight	0.001552 oz	0.001552 oz	0.001552 oz

Search Part Number : "DMN3013", Match & Start with "DMN3013" - Total : 4

Өндіруші	Бөлім №	Сипаттама
Diodes Incorporated	DMN3013LFG-7	MOSFET MOSFET BVDSS: 25V-30V
	DMN3013LDG-7	MOSFET MOSFET BVDSS: 25V-30V
	DMN3013LFG-13	MOSFET MOSFET BVDSS: 25V-30V
	DMN3013LDG-13	MOSFET MOSFET BVDSS: 25V-30V