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| PartNumber | DMN3010LFG-7 | DMN3010LFG-13 | DMN3010LFG |
| Description | MOSFET N-Ch Enh Mode FET 30Vdss 20Vgss | MOSFET N-Ch Enh Mode FET 30Vdss 20Vgss | |
| Manufacturer | Diodes Incorporated | Diodes Incorporated | - |
| Product Category | MOSFET | MOSFET | - |
| RoHS | Y | Y | - |
| Technology | Si | Si | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | PowerDI3333-8 | PowerDI3333-8 | - |
| Number of Channels | 1 Channel | 1 Channel | - |
| Transistor Polarity | N-Channel | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 30 V | - | - |
| Id Continuous Drain Current | 30 A | - | - |
| Rds On Drain Source Resistance | 8 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 2.5 V | - | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Qg Gate Charge | 37 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Pd Power Dissipation | 900 mW | - | - |
| Configuration | Single | Single | - |
| Channel Mode | Enhancement | - | - |
| Packaging | Reel | Reel | - |
| Series | DMN3010 | DMN3010 | - |
| Transistor Type | 1 N-Channel | 1 N-Channel | - |
| Brand | Diodes Incorporated | Diodes Incorporated | - |
| Fall Time | 10.7 ns | - | - |
| Product Type | MOSFET | MOSFET | - |
| Rise Time | 19.6 ns | - | - |
| Factory Pack Quantity | 2000 | 3000 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Typical Turn Off Delay Time | 31 ns | - | - |
| Typical Turn On Delay Time | 4.5 ns | - | - |
| Unit Weight | 0.002540 oz | - | - |
| Өндіруші | Бөлім № | Сипаттама | RFQ |
|---|---|---|---|
Diodes Incorporated |
DMN3010LFG-7 | MOSFET N-Ch Enh Mode FET 30Vdss 20Vgss | |
| DMN3010LFG-13 | MOSFET N-Ch Enh Mode FET 30Vdss 20Vgss | ||
| DMN3010LFG | Жаңа және түпнұсқа | ||
| DMN3010LFG-13 | MOSFET N-Ch Enh Mode FET 30Vdss 20Vgss | ||
| DMN3010LFG-7 | Darlington Transistors MOSFET N-Ch Enh Mode FET 30Vdss 20Vgss |