 |  | | |
| PartNumber | DMG6898LSD-13 | DMG6898LSD | DMG6898LSD-13-CUT TAPE |
| Description | MOSFET MOSFET N-CHAN | ||
| Manufacturer | Diodes Incorporated | Diodes Incorporated | - |
| Product Category | MOSFET | FETs - Arrays | - |
| RoHS | Y | - | - |
| Technology | Si | Si | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | SO-8 | - | - |
| Number of Channels | 2 Channel | 2 Channel | - |
| Transistor Polarity | N-Channel | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 20 V | - | - |
| Id Continuous Drain Current | 9.5 A | - | - |
| Rds On Drain Source Resistance | 11 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 500 mV | - | - |
| Vgs Gate Source Voltage | 12 V | - | - |
| Qg Gate Charge | 26 nC, 26 nC | - | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 150 C | + 150 C | - |
| Pd Power Dissipation | 1.28 W | - | - |
| Configuration | Dual | Dual | - |
| Channel Mode | Enhancement | - | - |
| Packaging | Reel | Digi-ReelR Alternate Packaging | - |
| Product | MOSFET Small Signal | - | - |
| Series | DMG6898 | DMG6898 | - |
| Transistor Type | 2 N-Channel | 2 N-Channel | - |
| Brand | Diodes Incorporated | - | - |
| Fall Time | 12.33 ns, 12.33 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 12.49 ns, 12.49 ns | - | - |
| Factory Pack Quantity | 2500 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 35.89 ns, 35.89 ns | - | - |
| Typical Turn On Delay Time | 11.67 ns, 11.67 ns | - | - |
| Unit Weight | 0.002610 oz | 0.002610 oz | - |
| Package Case | - | 8-SOIC (0.154", 3.90mm Width) | - |
| Operating Temperature | - | -55°C ~ 150°C (TJ) | - |
| Mounting Type | - | Surface Mount | - |
| Supplier Device Package | - | 8-SO | - |
| FET Type | - | 2 N-Channel (Dual) | - |
| Power Max | - | 1.28W | - |
| Drain to Source Voltage Vdss | - | 20V | - |
| Input Capacitance Ciss Vds | - | 1149pF @ 10V | - |
| FET Feature | - | Logic Level Gate | - |
| Current Continuous Drain Id 25°C | - | 9.5A | - |
| Rds On Max Id Vgs | - | 16 mOhm @ 9.4A, 4.5V | - |
| Vgs th Max Id | - | 1.5V @ 250μA | - |
| Gate Charge Qg Vgs | - | 26nC @ 10V | - |
| Pd Power Dissipation | - | 1.28 W | - |
| Id Continuous Drain Current | - | 9.5 A | - |
| Vds Drain Source Breakdown Voltage | - | 20 V | - |
| Rds On Drain Source Resistance | - | 11 mOhms | - |
| Qg Gate Charge | - | 11.6 nC | - |
| Forward Transconductance Min | - | 17 S | - |
| Өндіруші | Бөлім № | Сипаттама | RFQ |
|---|---|---|---|
Diodes Incorporated |
DMG6898LSD-13 | MOSFET MOSFET N-CHAN | |
| DMG6898LSDQ-13 | MOSFET Dual N-Ch Enh FET 30V 9.8A 20Vdss | ||
| DMG6898LSD | Жаңа және түпнұсқа | ||
| DMG6898LSD-13 | Trans MOSFET N-CH 20V 9.5A Automotive 8-Pin SO T/R | ||
| DMG6898LSD13 | Жаңа және түпнұсқа | ||
| DMG6898LSDQ | Жаңа және түпнұсқа | ||
| DMG6898LSS-13 | Жаңа және түпнұсқа | ||
| DMG6898LSD-13-CUT TAPE | Жаңа және түпнұсқа | ||
| DMG6898LSDQ-13 | Trans MOSFET N-CH 20V 9.5A Automotive 8-Pin SO T/R |