DMG63

DMG6301UDW-7 vs DMG6301UDW-13 vs DMG6301UDW-7-F

 
PartNumberDMG6301UDW-7DMG6301UDW-13DMG6301UDW-7-F
DescriptionMOSFET 25V Dual N-Ch Enh 8Vgss .24A 0.3WMOSFET 25V Dual N-Ch Enh 8Vgss .24A 0.3W
ManufacturerDiodes IncorporatedDiodes Incorporated-
Product CategoryMOSFETMOSFET-
RoHSYY-
TechnologySiSi-
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseSOT-363-6SOT-363-6-
Number of Channels2 Channel2 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage25 V25 V-
Id Continuous Drain Current240 mA240 mA-
Rds On Drain Source Resistance3.8 Ohms3.8 Ohms-
Vgs th Gate Source Threshold Voltage850 mV850 mV-
Vgs Gate Source Voltage8 V8 V-
Qg Gate Charge360 pC360 pC-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
Pd Power Dissipation370 mW370 mW-
ConfigurationDualDual-
Channel ModeEnhancementEnhancement-
PackagingReelReel-
SeriesDMG6301DMG6301-
Transistor Type2 N-Channel2 N-Channel-
BrandDiodes IncorporatedDiodes Incorporated-
Forward Transconductance Min1 S1 S-
Fall Time2.3 ns2.3 ns-
Product TypeMOSFETMOSFET-
Rise Time1.8 ns1.8 ns-
Factory Pack Quantity300010000-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time6.6 ns6.6 ns-
Typical Turn On Delay Time2.9 ns2.9 ns-
Unit Weight0.000212 oz0.000212 oz-
Tradename-PowerDI-
Өндіруші Бөлім № Сипаттама RFQ
Diodes Incorporated
Diodes Incorporated
DMG6301UDW-7 MOSFET 25V Dual N-Ch Enh 8Vgss .24A 0.3W
DMG6301UDW-13 MOSFET 25V Dual N-Ch Enh 8Vgss .24A 0.3W
DMG6301UDW-7-F Жаңа және түпнұсқа
DMG6301UDW-13 MOSFET 25V Dual N-Ch Enh 8Vgss .24A 0.3W
DMG6301UDW-7 MOSFET 25V Dual N-Ch Enh 8Vgss .24A 0.3W
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