 | |  | |
| PartNumber | DMC6040SSDQ-13 | DMC6040SSD-13 | DMC6040SSS-13 |
| Description | MOSFET MOSFET BVDSS: 41V-60V | MOSFET 31V to 100V Comp Pair Enh FET 60V | |
| Manufacturer | Diodes Incorporated | Diodes Incorporated | - |
| Product Category | MOSFET | MOSFET | - |
| Technology | Si | Si | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | SO-8 | SO-8 | - |
| Qualification | AEC-Q101 | - | - |
| Packaging | Reel | Reel | - |
| Brand | Diodes Incorporated | Diodes Incorporated | - |
| Product Type | MOSFET | MOSFET | - |
| Factory Pack Quantity | 2500 | 2500 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Unit Weight | 0.002610 oz | 0.002610 oz | - |
| RoHS | - | Y | - |
| Number of Channels | - | 2 Channel | - |
| Transistor Polarity | - | N-Channel, P-Channel | - |
| Vds Drain Source Breakdown Voltage | - | 60 V | - |
| Id Continuous Drain Current | - | 5.1 A, 3.1 A | - |
| Rds On Drain Source Resistance | - | 55 mOhms, 130 mOhms | - |
| Vgs th Gate Source Threshold Voltage | - | 3 V | - |
| Vgs Gate Source Voltage | - | 20 V | - |
| Qg Gate Charge | - | 20.8 nC, 9.5 nC | - |
| Minimum Operating Temperature | - | - 55 C | - |
| Maximum Operating Temperature | - | + 150 C | - |
| Pd Power Dissipation | - | 1.56 W | - |
| Configuration | - | Dual | - |
| Channel Mode | - | Enhancement | - |
| Series | - | DMC6040 | - |
| Transistor Type | - | 1 N-Channel, 1 P-Channel | - |
| Fall Time | - | 4.3 nS, 26.1 nS | - |
| Rise Time | - | 1.8 ns, 6.3 ns | - |
| Typical Turn Off Delay Time | - | 20.1 nS, 58.7 nS | - |
| Typical Turn On Delay Time | - | 3.6 nS, 3.7 nS | - |
| Өндіруші | Бөлім № | Сипаттама | RFQ |
|---|---|---|---|
Diodes Incorporated |
DMC6040SSDQ-13 | MOSFET MOSFET BVDSS: 41V-60V | |
| DMC6040SSD-13 | MOSFET 31V to 100V Comp Pair Enh FET 60V | ||
| DMC6040SSD-13 | MOSFET 31V to 100V Comp Pair Enh FET 60V | ||
| DMC6040SSDQ-13 | Trans MOSFET N/P-CH 60V 5.1A/3.1A 8-Pin SO T/R | ||
| DMC6040SSS-13 | Жаңа және түпнұсқа |