 |  | | |
| PartNumber | DMC31D5UDA-7B | DMC3112SVT | DMC31D5UDJ |
| Description | MOSFET MOSFET BVDSS: 25V-30V | ||
| Manufacturer | Diodes Incorporated | - | - |
| Product Category | MOSFET | - | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | X2-DFN0806-6 | - | - |
| Number of Channels | 2 Channel | - | - |
| Transistor Polarity | N-Channel, P-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 30 V | - | - |
| Id Continuous Drain Current | 400 mA, 220 mA | - | - |
| Rds On Drain Source Resistance | 4.5 Ohms, 10 Ohms | - | - |
| Vgs th Gate Source Threshold Voltage | 400 mV | - | - |
| Vgs Gate Source Voltage | 12 V | - | - |
| Qg Gate Charge | 0.38 nC, 0.35 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Pd Power Dissipation | 370 mW | - | - |
| Configuration | Dual | - | - |
| Channel Mode | Enhancement | - | - |
| Packaging | Reel | - | - |
| Transistor Type | 1 N-Channel, 1 P-Channel | - | - |
| Brand | Diodes Incorporated | - | - |
| Fall Time | 7.5 ns, 8.7 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 2.2 ns, 5.2 ns | - | - |
| Factory Pack Quantity | 10000 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 21 ns, 18.8 ns | - | - |
| Typical Turn On Delay Time | 3.2 ns, 3.5 ns | - | - |
| Өндіруші | Бөлім № | Сипаттама | RFQ |
|---|---|---|---|
Diodes Incorporated |
DMC31D5UDJ-7 | MOSFET 30V N & P Enh FET Low RDSon 22.2pF | |
| DMC31D5UDJ-7B | MOSFET MOSFET BVDSS: 25V-30V | ||
| DMC31D5UDA-7B | MOSFET MOSFET BVDSS: 25V-30V | ||
| DMC31D5UDJ-7B | MOSFET MOSFET BVDSS: 25V-30V | ||
| DMC3112SVT | Жаңа және түпнұсқа | ||
| DMC31D5UDJ | Жаңа және түпнұсқа | ||
| DMC31D5UDJ-7 | MOSFET N/P-CH 30V SOT963 |