 |  | | |
| PartNumber | DMC3025LSD-13 | DMC3025LSD | DMC3025LSD-13-F |
| Description | MOSFET 30V Comp ENH Mode 25 to 30V MosFET | ||
| Manufacturer | Diodes Incorporated | - | 10DIODES |
| Product Category | MOSFET | - | IC Chips |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | SO-8 | - | - |
| Number of Channels | 2 Channel | - | - |
| Transistor Polarity | N-Channel, P-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 30 V | - | - |
| Id Continuous Drain Current | 6.5 A, 4.2 A | - | - |
| Rds On Drain Source Resistance | 15 mOhms, 38 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 1 V, 2 V | - | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Qg Gate Charge | 9.8 nC, 10.5 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Pd Power Dissipation | 1.2 W | - | - |
| Configuration | Dual | - | - |
| Channel Mode | Enhancement | - | - |
| Packaging | Reel | - | - |
| Series | DMC3025 | - | - |
| Transistor Type | 1 N-Channel, 1 P-Channel | - | - |
| Brand | Diodes Incorporated | - | - |
| Fall Time | 5.8 ns, 12.4 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 4.2 ns, 4.9 ns | - | - |
| Factory Pack Quantity | 2500 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 16.6 ns, 28.4 ns | - | - |
| Typical Turn On Delay Time | 3.9 ns, 6.8 ns | - | - |
| Unit Weight | 0.002610 oz | - | - |
| Өндіруші | Бөлім № | Сипаттама | RFQ |
|---|---|---|---|
Diodes Incorporated |
DMC3025LSDQ-13 | MOSFET MOSFET BVDSS: 25V-30V | |
| DMC3025LSD-13 | MOSFET 30V Comp ENH Mode 25 to 30V MosFET | ||
| DMC3025LSD-13 | Darlington Transistors MOSFET 30V Comp ENH Mode 25 to 30V MosFET | ||
| DMC3025LSD | Жаңа және түпнұсқа | ||
| DMC3025LSD-13-F | Жаңа және түпнұсқа |