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| PartNumber | DMC202010R | DMC2020USD-13 | DMC2025UFDB-13 |
| Description | Bipolar Transistors - BJT COMPOSITE TRANSISTOR GL WNG 2.9x2.8mm | MOSFET 20V Comp Pair ENH 2kV ESD SO-8 Mosfet | MOSFET MOSFET BVDSS: 8V~24V U-DFN2020-6 T&R 10K |
| Manufacturer | Panasonic | Diodes Incorporated | Diodes Incorporated |
| Product Category | Bipolar Transistors - BJT | MOSFET | MOSFET |
| RoHS | Y | Y | - |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | SOT-23-5 | SOIC-8 | U-DFN2020-6 |
| Transistor Polarity | NPN | N-Channel, P-Channel | N-Channel, P-Channel |
| Configuration | Dual | Dual | Dual |
| Collector Emitter Voltage VCEO Max | 50 V | - | - |
| Gain Bandwidth Product fT | 150 MHz | - | - |
| Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
| Packaging | Reel | Reel | Reel |
| Brand | Panasonic | Diodes Incorporated | Diodes Incorporated |
| Continuous Collector Current | 100 mA | - | - |
| DC Collector/Base Gain hfe Min | 210 | - | - |
| Product Type | BJTs - Bipolar Transistors | MOSFET | MOSFET |
| Factory Pack Quantity | 3000 | 2500 | 10000 |
| Subcategory | Transistors | MOSFETs | MOSFETs |
| Technology | - | Si | Si |
| Number of Channels | - | 2 Channel | 2 Channel |
| Vds Drain Source Breakdown Voltage | - | 20 V | 20 V |
| Id Continuous Drain Current | - | 8.5 A, 6.8 A | 6 A, 3.5 A |
| Rds On Drain Source Resistance | - | 20 mOhms, 33 mOhms | 25 mOhms, 75 mOhms |
| Vgs th Gate Source Threshold Voltage | - | 500 mV, 400 mV | 500 mV, 1.4 V |
| Vgs Gate Source Voltage | - | 4.5 V | 10 V, 8 V |
| Qg Gate Charge | - | 11.6 nC, 8 nC | 12.3 nC, 8.8 nC |
| Minimum Operating Temperature | - | - 55 C | - 55 C |
| Pd Power Dissipation | - | 1.8 W | 1.4 W |
| Channel Mode | - | Enhancement | Enhancement |
| Series | - | DMC2020 | - |
| Transistor Type | - | 1 N-Channel, 1 P-Channel | - |
| Fall Time | - | 12.33 ns, 42.4 ns | 9.3 ns, 13 ns |
| Rise Time | - | 12.49 ns, 12.4 ns | 5.4 ns, 34.1 ns |
| Typical Turn Off Delay Time | - | 35.89 ns, 94.1 ns | 17.6 ns, 34.3 ns |
| Typical Turn On Delay Time | - | 11.67 ns, 16.8 ns | 3.4 ns, 22.6 ns |
| Unit Weight | - | 0.002610 oz | 0.000229 oz |
| Өндіруші | Бөлім № | Сипаттама | RFQ |
|---|---|---|---|
Panasonic |
DMC202010R | Bipolar Transistors - BJT COMPOSITE TRANSISTOR GL WNG 2.9x2.8mm | |
Diodes Incorporated |
DMC2020USD-13 | MOSFET 20V Comp Pair ENH 2kV ESD SO-8 Mosfet | |
| DMC2025UFDB-7 | MOSFET MOSFET BVDSS: 8V~24V U-DFN2020-6 T&R 3K | ||
| DMC2025UFDB-13 | MOSFET MOSFET BVDSS: 8V~24V U-DFN2020-6 T&R 10K | ||
| DMC2020USD-13-CUT TAPE | Жаңа және түпнұсқа | ||
| DMC2025UFDB-13 | MOSFET BVDSS: 8V-24V U-DFN2020-6 | ||
| DMC2025UFDB-7 | MOSFET BVDSS: 8V-24V U-DFN2020-6 | ||
| DMC2020USD-13 | Darlington Transistors MOSFET 20V Comp Pair ENH 2kV ESD SO-8 Mosfet | ||
| DMC2020USD | Жаңа және түпнұсқа | ||
| DMC2020USD-13-F | Жаңа және түпнұсқа | ||
| DMC20261 | Жаңа және түпнұсқа | ||
| DMC20261A | Жаңа және түпнұсқа | ||
Panasonic |
DMC202010R | Bipolar Transistors - BJT COMPOSITE TRANSISTOR GL WNG 2.9x2.8mm |