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| PartNumber | CSD19531Q5A | CSD19531KCS | CSD19531 |
| Description | MOSFET 100V 5.3mOhm Pwr MOSFET | MOSFET 100V 6.4mOhm Pwr MOSFET | |
| Manufacturer | Texas Instruments | Texas Instruments | TI |
| Product Category | MOSFET | MOSFET | FETs - Single |
| RoHS | E | Y | - |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | Through Hole | Through Hole |
| Package / Case | VSONP-8 | TO-220-3 | - |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 100 V | 100 V | - |
| Id Continuous Drain Current | 100 A | 200 A | - |
| Rds On Drain Source Resistance | 6.4 mOhms | 7.7 mOhms | - |
| Vgs th Gate Source Threshold Voltage | 2.7 V | 2.7 V | - |
| Vgs Gate Source Voltage | 20 V | 20 V | - |
| Qg Gate Charge | 37 nC | 38 nC | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Maximum Operating Temperature | + 150 C | + 175 C | + 175 C |
| Pd Power Dissipation | 3.3 W | 179 W | - |
| Configuration | Single | Single | Single |
| Channel Mode | Enhancement | Enhancement | Enhancement |
| Tradename | NexFET | NexFET | NexFET |
| Packaging | Reel | Tube | Tube |
| Height | 1 mm | 16.51 mm | - |
| Length | 6 mm | 10.67 mm | - |
| Series | CSD19531Q5A | CSD19531KCS | CSD19531KCS |
| Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
| Width | 4.9 mm | 4.7 mm | - |
| Brand | Texas Instruments | Texas Instruments | - |
| Forward Transconductance Min | 82 S | - | - |
| Fall Time | 5.2 ns | 4.1 ns | 4.1 ns |
| Product Type | MOSFET | MOSFET | - |
| Rise Time | 5.8 ns | 7.2 ns | 7.2 ns |
| Factory Pack Quantity | 2500 | 50 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Typical Turn Off Delay Time | 18.4 ns | 16 ns | 16 ns |
| Typical Turn On Delay Time | 6 ns | 8.4 ns | 8.4 ns |
| Unit Weight | - | 0.211644 oz | 0.211644 oz |
| Package Case | - | - | TO-220-3 |
| Pd Power Dissipation | - | - | 179 W |
| Vgs Gate Source Voltage | - | - | 20 V |
| Id Continuous Drain Current | - | - | 105 A |
| Vds Drain Source Breakdown Voltage | - | - | 100 V |
| Vgs th Gate Source Threshold Voltage | - | - | 2.7 V |
| Rds On Drain Source Resistance | - | - | 7.7 mOhms |
| Qg Gate Charge | - | - | 38 nC |
| Өндіруші | Бөлім № | Сипаттама | RFQ |
|---|---|---|---|
Texas Instruments |
CSD19531Q5AT | MOSFET 100V,5.3mOhm,NexFET Power MOSFET | |
| CSD19531Q5A | MOSFET 100V 5.3mOhm Pwr MOSFET | ||
| CSD19531KCS | MOSFET 100V 6.4mOhm Pwr MOSFET | ||
| CSD19531 | Жаңа және түпнұсқа | ||
| CSD19531Q5AT | MOSFET N-CH 100V 100A 8SON | ||
| CSD19531KCS | MOSFET N-CH 100V 100A TO220-3 | ||
| CSD19531Q5A | MOSFET N-CH 100V 100A 8SON |