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| PartNumber | CSD18536KTT | CSD18536KCS | CSD18536KTTT |
| Description | MOSFET 60V, N ch NexFET MOSFETG , single D2PAK, 1.6mOhm 3-DDPAK/TO-263 -55 to 175 | MOSFET 60V, N ch NexFET MOSFETG , single TO-220, 1.6mOhm 3-TO-220 -55 to 175 | MOSFET 60V, N ch NexFET MOSFETG , single D2PAK, 1.6mOhm 3-DDPAK/TO-263 -55 to 175 |
| Manufacturer | Texas Instruments | Texas Instruments | Texas Instruments |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | E | E | N |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | Through Hole | SMD/SMT |
| Package / Case | TO-263-3 | TO-220-3 | TO-263-3 |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 60 V | 60 V | 60 V |
| Id Continuous Drain Current | 200 A | 349 A | 200 A |
| Rds On Drain Source Resistance | 1.7 mOhms | 1.6 mOhms | 1.7 mOhms |
| Vgs th Gate Source Threshold Voltage | 1.8 V | 1.4 V | 1.8 V |
| Vgs Gate Source Voltage | 20 V | 10 V | 20 V |
| Qg Gate Charge | 140 nC | 108 nC | 140 nC |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Maximum Operating Temperature | + 175 C | + 175 C | + 175 C |
| Pd Power Dissipation | 375 W | 375 W | 375 W |
| Configuration | Single | Single | Single |
| Channel Mode | Enhancement | Enhancement | Enhancement |
| Tradename | NexFET | NexFET | NexFET |
| Packaging | Reel | Tube | Reel |
| Height | 19.7 mm | 16.51 mm | 19.7 mm |
| Length | 9.25 mm | 10.67 mm | 9.25 mm |
| Series | CSD18536KTT | CSD18536KCS | CSD18536KTT |
| Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
| Width | 10.26 mm | 4.7 mm | 10.26 mm |
| Brand | Texas Instruments | Texas Instruments | Texas Instruments |
| Forward Transconductance Min | 312 S | 312 S | 312 S |
| Fall Time | 4 ns | 4 ns | 4 ns |
| Moisture Sensitive | Yes | - | Yes |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 5 ns | 5 ns | 5 ns |
| Factory Pack Quantity | 500 | 50 | 50 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 24 ns | 24 ns | 24 ns |
| Typical Turn On Delay Time | 11 ns | 11 ns | 11 ns |
| Unit Weight | - | 0.063493 oz | - |
| Өндіруші | Бөлім № | Сипаттама | RFQ |
|---|---|---|---|
Texas Instruments |
CSD18536KTT | MOSFET 60V, N ch NexFET MOSFETG , single D2PAK, 1.6mOhm 3-DDPAK/TO-263 -55 to 175 | |
| CSD18536KCS | MOSFET 60V, N ch NexFET MOSFETG , single TO-220, 1.6mOhm 3-TO-220 -55 to 175 | ||
| CSD18536KTTT | MOSFET 60V, N ch NexFET MOSFETG , single D2PAK, 1.6mOhm 3-DDPAK/TO-263 -55 to 175 | ||
| CSD18536KTTT | MOSFET N-CH 60V 200A DDPAK | ||
| CSD18536KCS | Trans MOSFET N-CH Si 60V 200A 3-Pin(3+Tab) TO-220 Tube | ||
| CSD18536KTT | MOSFET N-CH 60V 200A DDPAK |