CLF1G0060S-1

CLF1G0060S-10U vs CLF1G0060S-10 vs CLF1G0060S-10UAMPLEON-CS

 
PartNumberCLF1G0060S-10UCLF1G0060S-10CLF1G0060S-10UAMPLEON-CS
DescriptionRF JFET Transistors Broadband RF power GaN HEMT- Bulk (Alt: CLF1G0060S-10)
ManufacturerNXPNXP Semiconductors-
Product CategoryRF JFET TransistorsTransistors - FETs, MOSFETs - Single-
RoHSY--
Transistor TypeHEMTHEMT-
TechnologyGaN SiGaN Si-
Gain14.5 dB14.5 dB-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage150 V--
Vgs Gate Source Breakdown Voltage3 V--
Id Continuous Drain Current1.7 A--
Minimum Operating Temperature- 65 C- 65 C-
Maximum Operating Temperature+ 150 C+ 150 C-
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseSOT1227B--
PackagingTubeTube-
ConfigurationSingleSingle-
Height3.48 mm--
Length5.18 mm--
Operating Frequency3.5 GHz3.5 GHz-
Operating Temperature Range- 65 C to + 150 C- 65 C to + 150 C-
Width4.19 mm--
BrandNXP Semiconductors--
Forward Transconductance Min380 mS--
Number of Channels1 Channel--
Product TypeRF JFET Transistors--
Factory Pack Quantity20--
SubcategoryTransistors--
Vgs th Gate Source Threshold Voltage- 2 V--
Package Case-SOT1227B-
Id Continuous Drain Current-1.7 A-
Vds Drain Source Breakdown Voltage-150 V-
Vgs th Gate Source Threshold Voltage-- 2 V-
Forward Transconductance Min-380 mS-
Vgs Gate Source Breakdown Voltage-3 V-
Өндіруші Бөлім № Сипаттама RFQ
NXP Semiconductors
NXP Semiconductors
CLF1G0060S-10U RF JFET Transistors Broadband RF power GaN HEMT
CLF1G0060S-10U RF JFET Transistors Broadband RF power GaN HEMT
CLF1G0060S-10 - Bulk (Alt: CLF1G0060S-10)
CLF1G0060S-10UAMPLEON-CS Жаңа және түпнұсқа
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