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CGHV6

CGHV60040D vs CGHV60075D5 vs CGHV60040D-GP4

 
PartNumberCGHV60040DCGHV60075D5CGHV60040D-GP4
DescriptionRF JFET Transistors GaN HEMT Die DC-6.0GHz, 40 WattRF JFET Transistors GaN HEMT Die DC-6.0GHz, 75 WattRF MOSFET HEMT 50V DIE
ManufacturerCree, Inc.Qorvo-
Product CategoryRF JFET TransistorsRF JFET Transistors-
RoHSYY-
Transistor TypeHEMTHEMT-
TechnologyGaNGaN SiC-
Gain18 dB16 dB-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage50 V--
Vgs Gate Source Breakdown Voltage---
Id Continuous Drain Current3.2 A--
Output Power40 W30 W-
Maximum Drain Gate Voltage---
Minimum Operating Temperature---
Maximum Operating Temperature---
Pd Power Dissipation---
Mounting StyleSMD/SMT--
Package / CaseDie--
PackagingGel PackTray-
Application---
ConfigurationDual--
Height100 um--
Length1800 um--
Operating Frequency6 GHz3.5 GHz-
Operating Temperature Range---
ProductGaN HEMT--
Width820 um--
BrandWolfspeed / CreeQorvo-
Forward Transconductance Min---
Gate Source Cutoff Voltage---
Number of Channels2 Channel--
Class---
Development Kit---
Fall Time---
NF Noise Figure---
P1dB Compression Point---
Product TypeRF JFET TransistorsRF JFET Transistors-
Rds On Drain Source Resistance---
Rise Time---
Factory Pack Quantity1036-
SubcategoryTransistorsTransistors-
Typical Turn Off Delay Time---
Vgs th Gate Source Threshold Voltage---
Part # AliasesCGHV60040D-GP41099983-
Series-T2G-
Type-GaN SiC HEMT-
Moisture Sensitive-Yes-
Өндіруші Бөлім № Сипаттама RFQ
N/A
N/A 		CGHV60040D RF JFET Transistors GaN HEMT Die DC-6.0GHz, 40 Watt
CGHV60075D5 RF JFET Transistors GaN HEMT Die DC-6.0GHz, 75 Watt
CGHV60170D RF JFET Transistors GaN HEMT Die DC-6.0GHz, 170 Watt
CGHV60040D-GP4 RF MOSFET HEMT 50V DIE
CGHV60075D5-GP4 RF POWER TRANSISTOR
CGHV60170D-GP4 RF MOSFET HEMT 50V DIE
CGHV60040D RF JFET Transistors DC-6GHz 40W GaN 50Volt
CGHV60170D RF JFET Transistors DC-6GHz 170W GaN 50Volt
CGHV60075D5 RF JFET Transistors 6.0GHz 75 Watt GaN Gain 17dB typ. 50V
CGHV60075D RF JFET Transistors 6.0GHz 75 Watt GaN Gain 17dB typ. 50V
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