 |  |  | |
| PartNumber | CGHV59070F | CGHV59070F-TB | CGHV59070F-AMP |
| Description | RF JFET Transistors GaN HEMT 4.4-5.9GHz, 70 Watt | TEST FIXTURE FOR CGHV59070F | EVAL BOARD WITH CGHV59070F |
| Manufacturer | Qorvo | - | - |
| Product Category | RF JFET Transistors | - | - |
| RoHS | Y | - | - |
| Transistor Type | HEMT | - | - |
| Technology | GaN SiC | - | - |
| Gain | 19 dB | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 28 V | - | - |
| Vgs Gate Source Breakdown Voltage | 100 V | - | - |
| Id Continuous Drain Current | 817 mA | - | - |
| Output Power | 24 W | - | - |
| Minimum Operating Temperature | - 40 C | - | - |
| Maximum Operating Temperature | + 85 C | - | - |
| Pd Power Dissipation | 28.8 W | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | QFN-8 | - | - |
| Packaging | Tray | - | - |
| Configuration | Single | - | - |
| Operating Frequency | 30 MHz to 1.215 GHz | - | - |
| Operating Temperature Range | - 40 C to + 85 C | - | - |
| Series | QPD | - | - |
| Brand | Qorvo | - | - |
| Development Kit | QPD1000PCB401, QPD1000PCB402 | - | - |
| Moisture Sensitive | Yes | - | - |
| Product Type | RF JFET Transistors | - | - |
| Factory Pack Quantity | 100 | - | - |
| Subcategory | Transistors | - | - |
| Vgs th Gate Source Threshold Voltage | - 2.8 V | - | - |
| Part # Aliases | 1131140 | - | - |
| Өндіруші | Бөлім № | Сипаттама | RFQ |
|---|---|---|---|
N/A |
CGHV59070F | RF JFET Transistors GaN HEMT 4.4-5.9GHz, 70 Watt | |
| CGHV59350F | RF JFET Transistors GaN HEMT 5.2-5.9GHz, 350 Watt | ||
| CGHV59070F | RF MOSFET HEMT 50V 440224 | ||
| CGHV59070F-TB | TEST FIXTURE FOR CGHV59070F | ||
| CGHV59350F-TB | TEST FIXTURE FOR CGHV59350F | ||
| CGHV59070F-AMP | EVAL BOARD WITH CGHV59070F | ||
| CGHV59350F | RF JFET Transistors 5.2-5.9GHz 350 Watt Gain typ. 10.5dB GaN |