 | | | |
| PartNumber | CE3512K2-C1 | CE3512K2 | CE3512K2-C1-CUT TAPE |
| Description | RF JFET Transistors 12GHz NF .3dB Ga 13.7dB -55C +125C | RF JFET Transistors 12GHz NF .3dB Ga 13.7dB -55C +125C | |
| Manufacturer | CEL | CEL | - |
| Product Category | RF JFET Transistors | RF JFET Transistors | - |
| RoHS | Y | Y | - |
| Technology | Si | GaAs | - |
| Packaging | Reel | Bulk | - |
| Brand | CEL | CEL | - |
| Product Type | RF JFET Transistors | RF JFET Transistors | - |
| Factory Pack Quantity | 10000 | 1 | - |
| Subcategory | Transistors | Transistors | - |
| Unit Weight | 0.000581 oz | 0.000581 oz | - |
| Transistor Type | - | pHEMT | - |
| Vds Drain Source Breakdown Voltage | - | 4 V | - |
| Id Continuous Drain Current | - | 10 mA | - |
| Minimum Operating Temperature | - | - 55 C | - |
| Maximum Operating Temperature | - | + 125 C | - |
| Pd Power Dissipation | - | 125 mW | - |
| Mounting Style | - | SMD/SMT | - |
| Forward Transconductance Min | - | 54 | - |
| Өндіруші | Бөлім № | Сипаттама | RFQ |
|---|---|---|---|
CEL |
CE3512K2-C1 | RF JFET Transistors 12GHz NF .3dB Ga 13.7dB -55C +125C | |
| CE3512K2 | RF JFET Transistors 12GHz NF .3dB Ga 13.7dB -55C +125C | ||
| CE3512K2-C1 | nter a Short Document/Title Name Here 12 GHz Super Low Noise FET in Hollow Plastic PKG | ||
| CE3512K2-C1-CUT TAPE | Жаңа және түпнұсқа |