BUV21

BUV21G vs BUV21 vs BUV21N

 
PartNumberBUV21GBUV21BUV21N
DescriptionBipolar Transistors - BJT 40A 200V 250W NPNBipolar Transistors - BJT 40A 200V 250W NPN
ManufacturerON SemiconductorON Semiconductor-
Product CategoryBipolar Transistors - BJTTransistors (BJT) - Single, Pre-Biased-
RoHSY--
Mounting StyleThrough HoleThrough Hole-
Package / CaseTO-204-2--
Transistor PolarityNPNNPN-
ConfigurationSingleSingle-
Collector Emitter Voltage VCEO Max200 V--
Collector Base Voltage VCBO250 V--
Emitter Base Voltage VEBO7 V--
Collector Emitter Saturation Voltage1.5 V1.5 V-
Maximum DC Collector Current40 A40 A-
Gain Bandwidth Product fT8 MHz8 MHz-
Minimum Operating Temperature- 65 C- 65 C-
Maximum Operating Temperature+ 150 C+ 150 C-
SeriesBUV21SWITCHMODE-
Height8.51 mm--
Length38.86 mm--
PackagingTrayTray-
Width26.67 mm--
BrandON Semiconductor--
Continuous Collector Current40 A40 A-
DC Collector/Base Gain hfe Min20--
Pd Power Dissipation250 W--
Product TypeBJTs - Bipolar Transistors--
Factory Pack Quantity100--
SubcategoryTransistors--
Unit Weight0.485440 oz--
Package Case-TO-204AE-
Mounting Type-Through Hole-
Supplier Device Package-TO-3-
Power Max-250W-
Transistor Type-NPN-
Current Collector Ic Max-40A-
Voltage Collector Emitter Breakdown Max-200V-
DC Current Gain hFE Min Ic Vce-20 @ 12A, 2V-
Vce Saturation Max Ib Ic-1.5V @ 3A, 25A-
Current Collector Cutoff Max-3mA-
Frequency Transition-8MHz-
Pd Power Dissipation-250 W-
Collector Emitter Voltage VCEO Max-200 V-
Collector Base Voltage VCBO-250 V-
Emitter Base Voltage VEBO-7 V-
DC Collector Base Gain hfe Min-20-
Өндіруші Бөлім № Сипаттама RFQ
BUV21G Bipolar Transistors - BJT 40A 200V 250W NPN
BUV21 Bipolar Transistors - BJT 40A 200V 250W NPN
BUV21N Жаңа және түпнұсқа
ON Semiconductor
ON Semiconductor
BUV21G TRANS NPN 200V 40A TO-3
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