 | |  | |
| PartNumber | BUK963R3-60E,118 | BUK963R2-40B,118 | BUK9640-100A,118 |
| Description | MOSFET N-channel TrenchMOS logic level FET | MOSFET HIGH PERF TRENCHMOS | MOSFET N-CH 100V 39A D2PAK |
| Manufacturer | Nexperia | Nexperia | - |
| Product Category | MOSFET | MOSFET | - |
| RoHS | Y | Y | - |
| Technology | Si | Si | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | TO-263-3 | TO-263-3 | - |
| Number of Channels | 1 Channel | 1 Channel | - |
| Transistor Polarity | N-Channel | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 60 V | 40 V | - |
| Id Continuous Drain Current | 120 A | 222 A | - |
| Rds On Drain Source Resistance | 2.73 mOhms | 2.8 mOhms | - |
| Vgs th Gate Source Threshold Voltage | 1.7 V | - | - |
| Vgs Gate Source Voltage | 15 V | 15 V | - |
| Qg Gate Charge | 95 nC | - | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 175 C | + 175 C | - |
| Pd Power Dissipation | 293 W | 300 W | - |
| Configuration | Single | Single | - |
| Channel Mode | Enhancement | Enhancement | - |
| Qualification | AEC-Q101 | AEC-Q101 | - |
| Packaging | Reel | Reel | - |
| Transistor Type | 1 N-Channel | 1 N-Channel | - |
| Brand | Nexperia | Nexperia | - |
| Fall Time | 109 ns | 192 ns | - |
| Product Type | MOSFET | MOSFET | - |
| Rise Time | 100 ns | 268 ns | - |
| Factory Pack Quantity | 800 | 800 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Typical Turn Off Delay Time | 158 ns | 257 ns | - |
| Typical Turn On Delay Time | 54 ns | 68 ns | - |
| Height | - | 4.5 mm | - |
| Length | - | 10.3 mm | - |
| Width | - | 9.4 mm | - |
| Part # Aliases | - | /T3 BUK963R2-40B | - |
| Өндіруші | Бөлім № | Сипаттама | RFQ |
|---|---|---|---|
Nexperia |
BUK9675-55A,118 | MOSFET TAPE13 PWR-MOS | |
| BUK964R4-40B,118 | MOSFET HIGH PERF TRENCHMOS | ||
| BUK964R2-55B,118 | MOSFET HIGH PERF TRENCHMOS | ||
| BUK963R3-60E,118 | MOSFET N-channel TrenchMOS logic level FET | ||
| BUK965R8-100E,118 | MOSFET N-channel TrenchMOS intermed level FET | ||
| BUK9675-100A,118 | MOSFET TAPE13 PWR-MOS | ||
| BUK966R5-60E,118 | MOSFET BUK966R5-60E/D2PAK/REEL 13" Q1 | ||
| BUK964R1-40E,118 | MOSFET N-channel TrenchMOS logic level FET | ||
| BUK9660-100A,118 | MOSFET TAPE13 PWR-MOS | ||
| BUK964R7-80E,118 | MOSFET BUK964R7-80E/D2PAK/REEL 13" Q1 | ||
| BUK964R2-80E,118 | MOSFET N-Chan 80V 120A | ||
| BUK964R2-60E,118 | MOSFET BUK964R2-60E/D2PAK/REEL 13" Q1 | ||
| BUK964R8-60E,118 | MOSFET BUK964R8-60E/D2PAK/REEL 13" Q1 | ||
| BUK964R2-60E,118 | MOSFET N-CH 60V 100A D2PAK | ||
| BUK964R8-60E,118 | MOSFET N-CH 60V 100A D2PAK | ||
| BUK965R4-40E,118 | MOSFET N-CH 40V 75A D2PAK | ||
| BUK965R8-100E,118 | MOSFET N-CH 100V 120A D2PAK | ||
| BUK966R5-60E,118 | MOSFET N-CH 60V 75A D2PAK | ||
| BUK9675-100A,118 | MOSFET N-CH 100V 23A D2PAK | ||
| BUK963R3-60E,118 | Darlington Transistors MOSFET N-channel TrenchMOS logic level FET | ||
| BUK964R1-40E,118 | Darlington Transistors MOSFET N-channel TrenchMOS logic level FET | ||
| BUK9640-100A,118 | MOSFET N-CH 100V 39A D2PAK | ||
| BUK964R2-80E,118 | IGBT Transistors MOSFET N-Chan 80V 120A | ||
| BUK964R7-80E,118 | IGBT Transistors MOSFET BUK964R7-80E/D2PAK/REEL13 | ||
| BUK9675-55A,118 | IGBT Transistors MOSFET TAPE13 PWR-MOS | ||
| BUK963R2-40B,118 | MOSFET HIGH PERF TRENCHMOS | ||
| BUK964R2-55B,118 | MOSFET HIGH PERF TRENCHMOS | ||
| BUK964R4-40B,118 | RF Bipolar Transistors MOSFET HIGH PERF TRENCHMOS | ||
| BUK9660-100A,118 | RF Bipolar Transistors MOSFET TAPE13 PWR-MOS | ||
NXP Semiconductors |
BUK9675-100A/C1J | MOSFET N-CH LFPAK | |
| BUK9675-55A /T3 | MOSFET TAPE13 PWR-MOS | ||
| BUK963R2-40B118 | Now Nexperia BUK963R2-40B - Power Field-Effect Transistor, 100A I(D), 40V, 0.0035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | ||
| BUK963R3-60E118 | Now Nexperia BUK963R3-60E - Power Field-Effect Transistor, 120A I(D), 60V, 0.0033ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | ||
| BUK9640-100A | MOSFET Transistor, N-Channel, SOT-404 | ||
| BUK9640-100A/C1 | Жаңа және түпнұсқа | ||
| BUK964R1-40E | Жаңа және түпнұсқа | ||
| BUK964R2-55B | Жаңа және түпнұсқа | ||
| BUK964R2-60E118 | Жаңа және түпнұсқа | ||
| BUK964R4-40B | Жаңа және түпнұсқа | ||
| BUK964R7-80E | Жаңа және түпнұсқа | ||
| BUK964R7-80E118 | Жаңа және түпнұсқа | ||
| BUK964R8-60E | MOSFET, N-CH, 60V, 100A, D2PAK | ||
| BUK964R8-60E118 | Жаңа және түпнұсқа | ||
| BUK965R8-100E | MOSFET, N CHANNEL, 100V, 120A, D2PAK, Transistor Polarity:N Channel, Continuous Drain Current Id:120A, Drain Source Voltage Vds:100V, On Resistance Rds(on):0.00445ohm, Rds(on) Test Voltage Vgs:10 | ||
| BUK965R8-100E118 | - Bulk (Alt: BUK965R8-100E118) | ||
| BUK966R5-60E | Жаңа және түпнұсқа | ||
| BUK9675-100A | POWER FIELD-EFFECT TRANSISTOR, 23A I(D), 100V, 0.084OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET | ||
| BUK9675-55A | Жаңа және түпнұсқа | ||
| BUK968R3-40E | Жаңа және түпнұсқа | ||
| BUK964R2-80E118 | Now Nexperia BUK964R2-80E - Power Field-Effect Transistor, 120A I(D), 80V, 0.0042ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET |