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| PartNumber | BUK7E1R9-40E,127 | BUK7E13-60E,127 | BUK7E1R8-40E,127 |
| Description | MOSFET N-channel TrenchMOS standard level FET | MOSFET N-channel TrenchMOS standard level FET | MOSFET BUK7E1R8-40E/I2PAK/STANDARD MA |
| Manufacturer | Nexperia | Nexperia | Nexperia |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | Y | Y |
| Technology | Si | Si | Si |
| Mounting Style | Through Hole | Through Hole | Through Hole |
| Package / Case | I2PAK-3 | I2PAK-3 | I2PAK-3 |
| Number of Channels | 1 Channel | 1 Channel | - |
| Transistor Polarity | N-Channel | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 40 V | 60 V | - |
| Id Continuous Drain Current | 120 A | 58 A | - |
| Rds On Drain Source Resistance | 1.5 mOhms | 9.6 mOhms | - |
| Vgs th Gate Source Threshold Voltage | 3 V | 3 V | - |
| Vgs Gate Source Voltage | 20 V | 20 V | - |
| Qg Gate Charge | 118 nC | 22.9 nC | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 175 C | + 175 C | - |
| Pd Power Dissipation | 324 W | 96 W | - |
| Configuration | Single | Single | - |
| Qualification | AEC-Q101 | AEC-Q101 | AEC-Q101 |
| Packaging | Tube | Tube | Tube |
| Transistor Type | 1 N-Channel | 1 N-Channel | - |
| Brand | Nexperia | Nexperia | Nexperia |
| Fall Time | 52 ns | 9.8 ns | - |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 49 ns | 9.2 ns | - |
| Factory Pack Quantity | 50 | 50 | 50 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 87 ns | 21.9 ns | - |
| Typical Turn On Delay Time | 35 ns | 10.8 ns | - |
| Unit Weight | 0.084199 oz | 0.081130 oz | 0.070548 oz |
| Channel Mode | - | Enhancement | - |
| Өндіруші | Бөлім № | Сипаттама | RFQ |
|---|---|---|---|
Nexperia |
BUK7E1R9-40E,127 | MOSFET N-channel TrenchMOS standard level FET | |
| BUK7E13-60E,127 | MOSFET N-channel TrenchMOS standard level FET | ||
| BUK7E1R8-40E,127 | MOSFET BUK7E1R8-40E/I2PAK/STANDARD MA | ||
| BUK7E13-60E,127 | MOSFET N-CH 60V 58A I2PAK | ||
| BUK7E1R8-40E,127 | MOSFET N-CH 40V 120A I2PAK | ||
| BUK7E1R9-40E,127 | Darlington Transistors MOSFET N-channel TrenchMOS standard level FET | ||
NXP Semiconductors |
BUK7E11-55B,127 | MOSFET N-CH 55V 75A I2PAK | |
| BUK7E1R6-30E,127 | MOSFET N-CH 30V 120A I2PAK | ||
| BUK7E11-55B127 | Now Nexperia BUK7E11-55B - Power Field-Effect Transistor, 75A I(D), 55V, 0.011ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA | ||
| BUK7E13-60E127 | Now Nexperia BUK7E13-60E - Power Field-Effect Transistor, 58A I(D), 60V, 0.013ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA | ||
| BUK7E1R6-30E127 | Now Nexperia BUK7E1R6-30E - Power Field-Effect Transistor, I2PAK | ||
| BUK7E1R8-40E127 | Жаңа және түпнұсқа |