![]() | ![]() | ![]() | |
| PartNumber | BTS282ZE3180A | BTS282ZE3180A/BTS282ZE3 | BTS282ZE3180AATMA1 |
| Description | Power Field-Effect Transistor, 80A I(D), 49V, 0.0095ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | Power Field-Effect Transistor, 80A I(D), 49V, 0.0095ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | |
| Manufacturer | Infineon Technologies | - | - |
| Product Category | Transistors - FETs, MOSFETs - Single | - | - |
| Series | BTS282 | - | - |
| Packaging | Reel | - | - |
| Part Aliases | BTS282Z E3180A SP000910848 | - | - |
| Unit Weight | 0.056438 oz | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package Case | TO-263-7 | - | - |
| Technology | Si | - | - |
| Number of Channels | 1 Channel | - | - |
| Configuration | Single | - | - |
| Transistor Type | 1 N-Channel | - | - |
| Pd Power Dissipation | 300 W | - | - |
| Maximum Operating Temperature | + 175 C | - | - |
| Minimum Operating Temperature | - 40 C | - | - |
| Fall Time | 36 ns | - | - |
| Rise Time | 37 ns | - | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Id Continuous Drain Current | 36 A | - | - |
| Vds Drain Source Breakdown Voltage | 49 V | - | - |
| Vgs th Gate Source Threshold Voltage | 1.6 V | - | - |
| Rds On Drain Source Resistance | 6.5 mOhms | - | - |
| Transistor Polarity | N-Channel | - | - |
| Typical Turn Off Delay Time | 70 ns | - | - |
| Typical Turn On Delay Time | 30 ns | - | - |
| Qg Gate Charge | 155 nC | - | - |
| Forward Transconductance Min | 30 S | - | - |
| Channel Mode | Enhancement | - | - |