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| PartNumber | BTS282ZE3180AATMA2 | BTS282ZE3230AKSA2 |
| Description | MOSFET N-Ch 49V 36A D2PAK-6 | MOSFET TEMPFET |
| Manufacturer | Infineon | Infineon |
| Product Category | MOSFET | MOSFET |
| Technology | Si | Si |
| Mounting Style | SMD/SMT | Through Hole |
| Package / Case | TO-263-7 | TO-220-7 |
| Number of Channels | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 49 V | 49 V |
| Id Continuous Drain Current | 36 A | 80 A |
| Rds On Drain Source Resistance | 6.5 mOhms | 5.8 mOhms |
| Vgs th Gate Source Threshold Voltage | 1.6 V | 1.2 V |
| Vgs Gate Source Voltage | 20 V | 20 V |
| Qg Gate Charge | 155 nC | 232 nC |
| Minimum Operating Temperature | - 40 C | - 55 C |
| Maximum Operating Temperature | + 175 C | + 150 C |
| Pd Power Dissipation | 300 W | 300 W |
| Configuration | Single | Single |
| Channel Mode | Enhancement | Enhancement |
| Qualification | AEC-Q101 | AEC-Q101 |
| Packaging | Reel | Tube |
| Height | 4.4 mm | 15.65 mm |
| Length | 10 mm | 10 mm |
| Series | BTS282 | - |
| Transistor Type | 1 N-Channel | 1 N-Channel |
| Width | 9.25 mm | 4.4 mm |
| Brand | Infineon Technologies | Infineon Technologies |
| Forward Transconductance Min | 30 S | 30 S |
| Fall Time | 36 ns | 36 ns |
| Product Type | MOSFET | MOSFET |
| Rise Time | 37 ns | 37 ns |
| Factory Pack Quantity | 1000 | 500 |
| Subcategory | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 70 ns | 70 ns |
| Typical Turn On Delay Time | 30 ns | 30 ns |
| Part # Aliases | BTS282Z E3180A SP000910848 | BTS282Z E3230 SP000969786 |
| Unit Weight | 0.056438 oz | 0.070548 oz |
| RoHS | - | Y |
| Өндіруші | Бөлім № | Сипаттама | RFQ |
|---|---|---|---|
Infineon Technologies |
BTS282ZE3180AATMA2 | MOSFET N-Ch 49V 36A D2PAK-6 | |
| BTS282ZE3230AKSA2 | MOSFET TEMPFET | ||
| BTS282ZE3230AKSA2 | MOSFET N-CH 49V 80A TO220-7 | ||
| BTS282ZE3180AATMA2 | MOSFET N-Ch 49V 36A D2PAK-6 | ||
| BTS282ZE3180A | Power Field-Effect Transistor, 80A I(D), 49V, 0.0095ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | ||
| BTS282ZE3180A/BTS282ZE3 | Жаңа және түпнұсқа | ||
| BTS282ZE3180AATMA1 | Power Field-Effect Transistor, 80A I(D), 49V, 0.0095ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | ||
| BTS282ZE3180ANTMA1 | - Bulk (Alt: BTS282ZE3180ANTMA1) | ||
| BTS282ZE3180AXT | MOSFET N-Ch 49V 80A TO220-7 | ||
| BTS282ZE3230 | Power Field-Effect Transistor, 80A I(D), 49V, 0.0095ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | ||
| BTS282ZE3230-ND | Жаңа және түпнұсқа | ||
| BTS282ZE3180AATMA2-CUT TAPE | Жаңа және түпнұсқа | ||
| BTS282ZE3230AKSA2-CUT TAPE | Жаңа және түпнұсқа |