BTS244ZE304

BTS244ZE3043AKSA2 vs BTS244ZE3040 vs BTS244ZE3043

 
PartNumberBTS244ZE3043AKSA2BTS244ZE3040BTS244ZE3043
DescriptionMOSFET N-Ch 55V 19A TO220-5Power Field-Effect Transisto
ManufacturerInfineon-Infineon Technologies
Product CategoryMOSFET-Transistors - FETs, MOSFETs - Single
TechnologySi-Si
Mounting StyleThrough Hole-Through Hole
Package / CaseTO-220-5--
Number of Channels1 Channel-1 Channel
Transistor PolarityN-Channel-N-Channel
Vds Drain Source Breakdown Voltage55 V--
Id Continuous Drain Current19 A--
Rds On Drain Source Resistance13 mOhms--
Vgs th Gate Source Threshold Voltage1.6 V--
Vgs Gate Source Voltage20 V--
Qg Gate Charge85 nC--
Minimum Operating Temperature- 40 C-- 40 C
Maximum Operating Temperature+ 175 C-+ 175 C
Pd Power Dissipation170 W--
ConfigurationSingle-Single
Channel ModeEnhancement-Enhancement
QualificationAEC-Q101--
PackagingTube-Tube
Height15.65 mm--
Length10 mm--
SeriesBTS244-BTS244
Transistor Type1 N-Channel-1 N-Channel
Width4.4 mm--
BrandInfineon Technologies--
Forward Transconductance Min25 S--
Fall Time25 ns-25 ns
Product TypeMOSFET--
Rise Time70 ns-70 ns
Factory Pack Quantity500--
SubcategoryMOSFETs--
Typical Turn Off Delay Time40 ns-40 ns
Typical Turn On Delay Time15 ns-15 ns
Part # AliasesBTS244Z E3043 SP000969782--
Unit Weight0.105822 oz-0.105822 oz
Part Aliases--BTS244Z E3043 SP000969782
Package Case--TO-220-5
Pd Power Dissipation--170 W
Vgs Gate Source Voltage--20 V
Id Continuous Drain Current--19 A
Vds Drain Source Breakdown Voltage--55 V
Vgs th Gate Source Threshold Voltage--1.6 V
Rds On Drain Source Resistance--13 mOhms
Qg Gate Charge--85 nC
Forward Transconductance Min--25 S
Өндіруші Бөлім № Сипаттама RFQ
Infineon Technologies
Infineon Technologies
BTS244ZE3043AKSA2 MOSFET N-Ch 55V 19A TO220-5
BTS244ZE3043AKSA2 MOSFET N-Ch 55V 19A TO220-5
BTS244ZE3040 Жаңа және түпнұсқа
BTS244ZE3043 Power Field-Effect Transisto
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