 | |  | |
| PartNumber | BSZ031NE2LS5ATMA1 | BSZ034N04LS | BSZ033NE2LS5ATMA1 |
| Description | MOSFET LV POWER MOS | MOSFET DIFFERENTIATED MOSFETS | MOSFET N-CH 25V 18A 8SON |
| Manufacturer | Infineon | Infineon | - |
| Product Category | MOSFET | MOSFET | - |
| RoHS | Y | Y | - |
| Technology | Si | Si | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | TSDSON-8 | TSDSON-8 | - |
| Transistor Polarity | N-Channel | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 25 V | 40 V | - |
| Tradename | OptiMOS | OptiMOS | - |
| Packaging | Reel | Reel | - |
| Height | 1.1 mm | 1.1 mm | - |
| Length | 3.3 mm | 3.3 mm | - |
| Series | OptiMOS 5 | OptiMOS 5 | - |
| Width | 3.3 mm | 3.3 mm | - |
| Brand | Infineon Technologies | Infineon Technologies | - |
| Product Type | MOSFET | MOSFET | - |
| Factory Pack Quantity | 5000 | 5000 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Part # Aliases | BSZ031NE2LS5 SP001385378 | BSZ034N04LSATMA1 SP001067020 | - |
| Number of Channels | - | 1 Channel | - |
| Id Continuous Drain Current | - | 40 A | - |
| Rds On Drain Source Resistance | - | 2.7 mOhms | - |
| Vgs th Gate Source Threshold Voltage | - | 1.2 V | - |
| Vgs Gate Source Voltage | - | 20 V | - |
| Qg Gate Charge | - | 35 nC | - |
| Minimum Operating Temperature | - | - 55 C | - |
| Maximum Operating Temperature | - | + 150 C | - |
| Pd Power Dissipation | - | 52 W | - |
| Configuration | - | Single | - |
| Channel Mode | - | Enhancement | - |
| Transistor Type | - | 1 N-Channel | - |
| Forward Transconductance Min | - | 46 S | - |
| Fall Time | - | 3 ns | - |
| Rise Time | - | 4 ns | - |
| Typical Turn Off Delay Time | - | 19 ns | - |
| Typical Turn On Delay Time | - | 4 ns | - |
| Өндіруші | Бөлім № | Сипаттама | RFQ |
|---|---|---|---|
Infineon Technologies |
BSZ031NE2LS5ATMA1 | MOSFET LV POWER MOS | |
| BSZ035N03MS G | MOSFET N-Ch 30V 40A TSDSON-8 OptiMOS 3M | ||
| BSZ036NE2LS | MOSFET N-Ch 25V 40A TDSON-8 OptiMOS | ||
| BSZ036NE2LSATMA1 | MOSFET N-Ch 25V 40A TDSON-8 OptiMOS | ||
| BSZ034N04LS | MOSFET DIFFERENTIATED MOSFETS | ||
| BSZ034N04LSATMA1 | MOSFET MV POWER MOS | ||
| BSZ039N06NSATMA1 | MOSFET TRENCH 40<-<100V | ||
| BSZ037N06LS5ATMA1 | MOSFET 60V Mosfet 3,7mOhm, PQFN 3x3 | ||
| BSZ035N03LS G | MOSFET N-Ch 30V 40A TSDSON-8 OptiMOS 3 | ||
| BSZ033NE2LS5ATMA1 | MOSFET N-CH 25V 18A 8SON | ||
| BSZ035N03LSGATMA1 | MOSFET N-CH 30V 40A TSDSON-8 | ||
| BSZ035N03MSGATMA1 | MOSFET N-CH 30V 40A TSDSON-8 | ||
| BSZ036NE2LSATMA1 | MOSFET N-CH 25V 16A TSDSON-8 | ||
| BSZ031NE2LS5ATMA1 | MOSFET N-CH 25V 19A 8SON | ||
| BSZ034N04LSATMA1 | MOSFET N-CH 40V 19A 8TSDSON | ||
Infineon Technologies |
BSZ035N03LSGATMA1 | MOSFET LV POWER MOS | |
| BSZ035N03LSG REEL | - Bulk (Alt: BSZ035N03LSG REEL) | ||
| BSZ033N03LSCG | Жаңа және түпнұсқа | ||
| BSZ033N03MSCG | Жаңа және түпнұсқа | ||
| BSZ034N04LS | Trans MOSFET N-CH 40V 40A 8-Pin TSDSON FL T/R (Alt: BSZ034N04LS) | ||
| BSZ035N03 | Жаңа және түпнұсқа | ||
| BSZ035N03L | Жаңа және түпнұсқа | ||
| BSZ035N03L(035N03L) | Жаңа және түпнұсқа | ||
| BSZ035N03LS | Жаңа және түпнұсқа | ||
| BSZ035N03LSG | Power Field-Effect Transistor, 40A I(D), 30V, 0.0057ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | ||
| BSZ035N03M | Жаңа және түпнұсқа | ||
| BSZ035N03MS | Жаңа және түпнұсқа | ||
| BSZ035N03MS G | Trans MOSFET N-CH 30V 18A 8-Pin TSDSON T/R (Alt: BSZ035N03MS G) | ||
| BSZ035N03MSG | Trans MOSFET N-CH 30V 18A 8-Pin TSDSON EP | ||
| BSZ035N03MSG , TFZV3.0B | Жаңа және түпнұсқа | ||
| BSZ036NE2LS | MOSFET N-Ch 25V 40A TDSON-8 OptiMOS | ||
| BSZ036NE2LSG | Жаңа және түпнұсқа | ||
| BSZ03XN03LSG | Жаңа және түпнұсқа | ||
| BSZ035N03LS G | MOSFET N-Ch 30V 40A TSDSON-8 OptiMOS 3 |