 | |  | |
| PartNumber | BSS225 H6327 | BSS225H6327FTSA1 | BSS225 |
| Description | MOSFET N-Ch 600V 90mA SOT-89-3 | MOSFET N-Ch 600V 90mA SOT-89-3 | MOSFET N-CH 600V 0.09A SOT-89 |
| Manufacturer | Infineon | Infineon | INFINEON |
| Product Category | MOSFET | MOSFET | FETs - Single |
| RoHS | Y | Y | - |
| Technology | Si | Si | MOSFET (Metal Oxide) |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | SOT-89-3 | SOT-89-3 | TO-243AA |
| Number of Channels | 1 Channel | 1 Channel | - |
| Transistor Polarity | N-Channel | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 600 V | 600 V | - |
| Id Continuous Drain Current | 90 mA | 90 mA | - |
| Rds On Drain Source Resistance | 28 Ohms | 28 Ohms | - |
| Vgs th Gate Source Threshold Voltage | 1.3 V | 1.3 V | - |
| Vgs Gate Source Voltage | 20 V | 20 V | - |
| Qg Gate Charge | 5.8 nC | 5.8 nC | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 150 C | + 150 C | - |
| Pd Power Dissipation | 1 W | 1 W | - |
| Configuration | Single | Single | - |
| Channel Mode | Enhancement | Enhancement | - |
| Packaging | Reel | Reel | Tape & Reel (TR) |
| Height | 1.5 mm | 1.5 mm | - |
| Length | 4.5 mm | 4.5 mm | - |
| Series | BSS225 | BSS225 | SIPMOS |
| Transistor Type | 1 N-Channel | 1 N-Channel | - |
| Width | 2.5 mm | 2.5 mm | - |
| Brand | Infineon Technologies | Infineon Technologies | - |
| Forward Transconductance Min | 50 mS | 50 mS | - |
| Fall Time | 41 ns | 41 ns | - |
| Product Type | MOSFET | MOSFET | - |
| Rise Time | 38 ns | 38 ns | - |
| Factory Pack Quantity | 1000 | 1000 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Typical Turn Off Delay Time | 62 ns | 62 ns | - |
| Typical Turn On Delay Time | 14 ns | 14 ns | - |
| Part # Aliases | BSS225H6327FTSA1 SP001047644 | BSS225 H6327 SP001047644 | - |
| Unit Weight | - | 0.004603 oz | - |
| Part Status | - | - | Obsolete |
| FET Type | - | - | N-Channel |
| Drain to Source Voltage (Vdss) | - | - | 600V |
| Current Continuous Drain (Id) @ 25°C | - | - | 90mA (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | - | - | 4.5V, 10V |
| Vgs(th) (Max) @ Id | - | - | 2.3V @ 94A |
| Gate Charge (Qg) (Max) @ Vgs | - | - | 5.8nC @ 10V |
| Vgs (Max) | - | - | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | - | - | 131pF @ 25V |
| FET Feature | - | - | - |
| Power Dissipation (Max) | - | - | 1W (Ta) |
| Rds On (Max) @ Id, Vgs | - | - | 45 Ohm @ 90mA, 10V |
| Operating Temperature | - | - | -55°C ~ 150°C (TJ) |
| Mounting Type | - | - | Surface Mount |
| Supplier Device Package | - | - | PG-SOT89 |
| Өндіруші | Бөлім № | Сипаттама | RFQ |
|---|---|---|---|
Infineon Technologies |
BSS225 H6327 | MOSFET N-Ch 600V 90mA SOT-89-3 | |
| BSS225H6327FTSA1 | MOSFET N-Ch 600V 90mA SOT-89-3 | ||
| BSS225 | MOSFET N-CH 600V 0.09A SOT-89 | ||
| BSS225H6327FTSA1 | MOSFET N-CH 600V 0.09A SOT-89 | ||
| BSS225L6327HTSA1 | MOSFET N-CH 600V 0.09A SOT-89 | ||
| BSS225H6327XTSA1 | IGBT Transistors MOSFET SMALL SIGNAL+P-CH | ||
| BSS225 E6327 | Жаңа және түпнұсқа | ||
| BSS225 H6327 | MOSFET N-Ch 600V 90mA SOT-89-3 | ||
| BSS225 H6327(SP001047644 | Жаңа және түпнұсқа | ||
| BSS225 L6327 | MOSFET N-Ch 600V 90mA SOT-89-3 | ||
| BSS225 L6327 , TFZ5.1B , | Жаңа және түпнұсқа | ||
| BSS225E6327 | Жаңа және түпнұсқа | ||
| BSS225H6327 | Trans MOSFET N-CH 600V 0.09A 3-Pin SOT-89 T/R (Alt: BSS225 H6327) | ||
| BSS225L6327 | Жаңа және түпнұсқа | ||
| BSS225L6327 , MDL914S2 | Жаңа және түпнұсқа |