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| PartNumber | BSR92PL6327HTSA1 | BSR92PL6327 |
| Description | MOSFET P-Ch -250V 140mA SOT-23-3 | Small Signal Field-Effect Transistor, 0.14A I(D), 250V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET |
| Manufacturer | Infineon | - |
| Product Category | MOSFET | - |
| RoHS | Y | - |
| Technology | Si | - |
| Mounting Style | SMD/SMT | - |
| Package / Case | SOT-23-3 | - |
| Number of Channels | 1 Channel | - |
| Transistor Polarity | P-Channel | - |
| Vds Drain Source Breakdown Voltage | 250 V | - |
| Id Continuous Drain Current | 140 mA | - |
| Rds On Drain Source Resistance | 8 Ohms | - |
| Vgs th Gate Source Threshold Voltage | 2 V | - |
| Vgs Gate Source Voltage | 20 V | - |
| Qg Gate Charge | - 4.8 nC | - |
| Minimum Operating Temperature | - 55 C | - |
| Maximum Operating Temperature | + 150 C | - |
| Pd Power Dissipation | 500 mW (1/2 W) | - |
| Configuration | Single | - |
| Channel Mode | Enhancement | - |
| Packaging | Reel | - |
| Height | 1.1 mm | - |
| Length | 3 mm | - |
| Series | BSR92 | - |
| Transistor Type | 1 P-Channel | - |
| Width | 1.6 mm | - |
| Brand | Infineon Technologies | - |
| Forward Transconductance Min | 100 mS | - |
| Fall Time | 71 ns | - |
| Product Type | MOSFET | - |
| Rise Time | 6.3 ns | - |
| Factory Pack Quantity | 3000 | - |
| Subcategory | MOSFETs | - |
| Typical Turn Off Delay Time | 75 ns | - |
| Typical Turn On Delay Time | 6.4 ns | - |
| Part # Aliases | BSR92P BSR92PL6327XT L6327 SP000265408 | - |
| Unit Weight | 0.000282 oz | - |
| Өндіруші | Бөлім № | Сипаттама | RFQ |
|---|---|---|---|
Infineon Technologies |
BSR92PL6327HTSA1 | MOSFET P-Ch -250V 140mA SOT-23-3 | |
| BSR92PL6327 | Small Signal Field-Effect Transistor, 0.14A I(D), 250V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | ||
Infineon Technologies |
BSR92PL6327HTSA1 | MOSFET P-CH 250V 0.14A SC-59 |